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JANTX2N7227

Description
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size62KB,5 Pages
ManufacturerOmnirel Corp.
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JANTX2N7227 Overview

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

JANTX2N7227 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerOmnirel Corp.
package instructionHERMETIC SEALED, TO-254AA, 3 PIN
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)700 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)14 A
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.415 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)56 A
Certification statusNot Qualified
GuidelineMIL-19500/592
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N7224, JANTX2N7224, JANTXV2N7224
2N7225, JANTX2N7225, JANTXV2N7225
2N7227, JANTX2N7227, JANTXV2N7227
2N7228, JANTX2N7228, JANTXV2N7228
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,
QUALIFIED TO MIL-PRF-19500/592
100V Thru 500V, Up to 34A, N-Channel,
MOSFET Power Transistor, Repetitive Avalanche Rated
FEATURES
Repetitive Avalanche Rating
Isolated and Hermetically Sealed
Low R
DS(on)
Ease of Paralleling
Ceramic Feedthroughs
Qualified to MIL-PRF-19500
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I i
ts
ideally suited for Military requirements where small size, high performance and high reliability are required, and in
applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy
plecrut.
us icis
PRIMARY ELECTRICAL CHARACTERISTICS @ T
C
= 25
°
C
PART NUMBER
2N7224
2N7225
2N7227
2N7228
V
DS,
Vo t
ls
100
200
400
500
R
DS(on)
.070
.100
.315
.415
I
,
A m p s
D
34
27.4
14
12
S C H E M ATIC
MECHANICAL OUTLINE
.545
.535
.144 DIA.
.050
.040
.685
.665
.800
.790
.550
.530
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1
2
3
.550
.510
.045
.035
.150 TYP.
.260
.249
.005
.150 TYP.
4 11 R0
31 - 1
.

JANTX2N7227 Related Products

JANTX2N7227 JANTXV2N7227 JANTXV2N7224 JANTXV2N7225 JANTX2N7228 2N7224 JANTX2N7224 JANTX2N7225 JANTXV2N7228
Description Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 21A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction HERMETIC SEALED, TO-254AA, 3 PIN HERMETIC SEALED, TO-254AA, 3 PIN HERMETIC SEALED, TO-254AA, 3 PIN HERMETIC SEALED, TO-254AA, 3 PIN HERMETIC SEALED, TO-254AA, 3 PIN HERMETIC SEALED, TO-254AA, 3 PIN HERMETIC SEALED, TO-254AA, 3 PIN HERMETIC SEALED, TO-254AA, 3 PIN HERMETIC SEALED, TO-254AA, 3 PIN
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V 100 V 200 V 500 V 100 V 100 V 200 V 500 V
Maximum drain current (Abs) (ID) 14 A 14 A 34 A 27.4 A 12 A 34 A 34 A 27.4 A 12 A
Maximum drain current (ID) 14 A 14 A 34 A 27.4 A 12 A 21 A 34 A 27.4 A 12 A
Maximum drain-source on-resistance 0.415 Ω 0.415 Ω 0.081 Ω 0.105 Ω 0.515 Ω 0.081 Ω 0.081 Ω 0.105 Ω 0.515 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA
JESD-30 code S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL METAL METAL METAL METAL METAL METAL METAL
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 150 W 150 W 150 W 150 W 150 W 150 W 150 W 150 W 150 W
Maximum pulsed drain current (IDM) 56 A 56 A 136 A 110 A 48 A 136 A 136 A 110 A 48 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker Omnirel Corp. - - - Omnirel Corp. Omnirel Corp. Omnirel Corp. Omnirel Corp. Omnirel Corp.
Avalanche Energy Efficiency Rating (Eas) 700 mJ 700 mJ 150 mJ 500 mJ 750 mJ - 150 mJ 500 mJ 750 mJ
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Guideline MIL-19500/592 MIL-19500/592 MIL-19500/592 MIL-19500/592 MIL-19500/592 - MIL-19500/592 MIL-19500/592 MIL-19500/592
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1 1 -
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