LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
PNP Silicon
FEATURE
High current capacity in compact package.
I
C
= 0.8A.
Epitaxial planar type.
NPN complement: L2SD1781K
L2SB1197KQLT1G Series
S-L2SB1197KQ LT1G Series
3
1
2
SOT– 23 (TO–236AB)
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SB1197KQLT1G
S-L2SB1197KQLT1G
L2SB1197KQLT3G
S-L2SB1197KQLT3G
L2SB1197KRLT1G
S-L2SB1197KRLT1G
L2SB1197KRLT3G
S-L2SB1197KRLT3G
Marking
AHQ
AHQ
AHR
AHR
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS(Ta=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−40
−32
−5
−0.8
0.2
150
−55
to 150
Unit
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−40
−32
−5
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
200
12
Max.
−
−
−
−0.5
−0.5
−0.5
390
−
30
Unit
V
V
V
I
C
= −50µ
A
I
C
= −1mA
I
E
= −50µ
A
V
CB
= −20V
V
EB
= −4V
I
C
/I
B
= −0.5A/ −50mA
V
CE
= −3V,
I
C
= −100mA
V
CE
= −5V,
I
E
=50mA,
f=100MHz
V
CB
= −10V,
I
E
=0A,
f=1MHz
Conditions
µ
A
µ
A
V
−
MHz
pF
h
FE
values are classified as follows :
Item(*)
h
FE
Q
120~270
R
180~390
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
L2SB1197KQLT1G Series
S-L2SB1197KQLT1G Series
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
C
D
H
K
J
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
MCU
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