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S-L2SB1197KRLT3G

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size114KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

S-L2SB1197KRLT3G Overview

Small Signal Bipolar Transistor,

S-L2SB1197KRLT3G Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
PNP Silicon
FEATURE
High current capacity in compact package.
I
C
= 0.8A.
Epitaxial planar type.
NPN complement: L2SD1781K
L2SB1197KQLT1G Series
S-L2SB1197KQ LT1G Series
3
1
2
SOT– 23 (TO–236AB)
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SB1197KQLT1G
S-L2SB1197KQLT1G
L2SB1197KQLT3G
S-L2SB1197KQLT3G
L2SB1197KRLT1G
S-L2SB1197KRLT1G
L2SB1197KRLT3G
S-L2SB1197KRLT3G
Marking
AHQ
AHQ
AHR
AHR
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS(Ta=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−40
−32
−5
−0.8
0.2
150
−55
to 150
Unit
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−40
−32
−5
120
Typ.
200
12
Max.
−0.5
−0.5
−0.5
390
30
Unit
V
V
V
I
C
= −50µ
A
I
C
= −1mA
I
E
= −50µ
A
V
CB
= −20V
V
EB
= −4V
I
C
/I
B
= −0.5A/ −50mA
V
CE
= −3V,
I
C
= −100mA
V
CE
= −5V,
I
E
=50mA,
f=100MHz
V
CB
= −10V,
I
E
=0A,
f=1MHz
Conditions
µ
A
µ
A
V
MHz
pF
h
FE
values are classified as follows :
Item(*)
h
FE
Q
120~270
R
180~390
Rev.O 1/3

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Reach Compliance Code unknown unknown unknown unknown
Base Number Matches 1 1 1 1
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