Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MINIMOLD PACKAGE-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | NEC Electronics |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 25 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 90 |
| JESD-30 code | R-PSSO-F3 |
| JESD-609 code | e6 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN BISMUTH |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 110 MHz |
| Base Number Matches | 1 |
| 2SB798DM-AZ | 2SB798DK-AZ | 2SB798DK | 2SB798DL-AZ | 2SB798DL | 2SB798DM | 2SB798-AZ | |
|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MINIMOLD PACKAGE-3 | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MINIMOLD PACKAGE-3 | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MINIMOLD PACKAGE-3 | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MINIMOLD PACKAGE-3 | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MINIMOLD PACKAGE-3 | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MINIMOLD PACKAGE-3 | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MINIMOLD PACKAGE-3 |
| Is it Rohs certified? | conform to | conform to | incompatible | conform to | incompatible | incompatible | conform to |
| Maker | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics |
| package instruction | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
| Collector-emitter maximum voltage | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 90 | 200 | 200 | 135 | 135 | 90 | 50 |
| JESD-30 code | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 |
| JESD-609 code | e6 | e6 | e0 | e6 | e0 | e0 | e6 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 260 |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES | YES |
| Terminal surface | TIN BISMUTH | TIN BISMUTH | TIN LEAD | TIN BISMUTH | TIN LEAD | TIN LEAD | TIN BISMUTH |
| Terminal form | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 10 |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 110 MHz | 110 MHz | 110 MHz | 110 MHz | 110 MHz | 110 MHz | 110 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
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