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2N6799LCC4-JQR-A

Description
Power Field-Effect Transistor, 3A I(D), 350V, 1ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15
CategoryDiscrete semiconductor    The transistor   
File Size55KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

2N6799LCC4-JQR-A Overview

Power Field-Effect Transistor, 3A I(D), 350V, 1ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15

2N6799LCC4-JQR-A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCHIP CARRIER, R-CQCC-N15
Reach Compliance Codecompliant
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CQCC-N15
Number of terminals15
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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