HC6856WQRZC60 datasheet, PDF - EEWORLD Datasheet

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HC6856WQRZC60: Description32K x 8 STATIC RAM; File Size158KB，12 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HC6856WQRZC60 Overview

32K x 8 STATIC RAM

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Military & Space Products

32K x 8 STATIC RAM

FEATURES

RADIATION

• Fabricated with RICMOS

™

IV Bulk

0.8

µm

Process (L

eff

= 0.65

µm)

• Total Dose Hardness through 1x10

rad(SiO

)

• Neutron Hardness through 1x10

-2

• Dynamic and Static Transient Upset Hardness

through 1x10

rad(Si)/s

• Soft Error Rate of <1x10

-10

upsets/bit-day

• Dose Rate Survivability through 1x10

rad(Si)/s

• Latchup Free

OTHER

HC6856

• Listed on SMD #5962-92153. Available as

MIL-PRF-38535 QML Class Q and Class V

• Read/Write Cycle Times

≤

30 ns (Typical)

≤

40 ns (-55 to 125°C)

• Standby Current of 20

µA

(typical)

• Asynchronous Operation

• CMOS or TTL Compatible I/O

• Single 5 V

10% Power Supply

• Packaging Options

- 36-Lead Flat Pack (0.630 in. x 0.650 in.)

- 28-Lead Flat Pack (0.530 in. x 0.720 in.)

- 28-Lead DIP, MIL-STD-1835, CDIP2-T28

GENERAL DESCRIPTION

The 32K x 8 Radiation Hardened Static RAM is a high

performance 32,768 x 8-bit static random access memory

with industry-standard functionality. It is fabricated with

Honeywell’s radiation hardened technology, and is de-

signed for use in systems operating in radiation environ-

ments. The RAM operates over the full military temperature

range and requires only a single 5 V

10% power supply.

The RAM is available with either TTL or CMOS compatible

I/O. Power consumption is typically less than 50 mW/MHz

in operation, and less than 5 mW/MHz in the low power

disabled mode. The RAM read operation is fully asynchro-

nous, with an associated typical access time of 20 ns.

Honeywell’s enhanced RICMOS

™

IV (Radiation Insensitive

CMOS) technology is radiation hardened through the use of

advanced and proprietary design, layout, and process hard-

ening techniques. The RICMOS

™

IV process is a 5-volt,

twin-well CMOS technology with a 170 Å gate oxide and a

minimum drawn feature size of 0.8

µm

(0.65

µm

effective

gate length—L

eff

). Additional features include a three layer

interconnect metalization and a lightly doped drain (LDD)

structure for improved short channel reliability. High resis-

tivity cross-coupled polysilicon resistors have been incorpo-

rated for single event upset hardening.

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