2N6315
2N6317
MECHANICAL DATA
Dimensions in mm (inches)
COMPLEMENTARY SILICON
MEDIUM POWER TRANSISTORS
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0.71 (0.028)
0.86 (0.034)
14.48 (0.570)
14.99 (0.590)
11.94 (0.470)
12.70 (0.500)
24.13 (0.95)
24.63 (0.97)
1
2
COMPLEMENTARY TRANSISTORS
2N6315 (NPN) AND 2N6317 (PNP)
FEATURES
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
• Low Collector Emitter Saturation Voltage
• Low Leakage Current
• Excellent DC Current Gain
TO–66 (TO-213AA)
Pin 1 –Base
Pin 2 –Emitter
Case – Collector
APPLICATIONS:
Designed for general purpose amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C unless otherwise stated)
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
T
STG
, T
J
R
θJC
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
60V
60V
5V
7A
15A
2A
90W
0.515W/°C
–65 to +200°C
1.94°C/W
Continuous
Peak
Base Current
Total Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance – Junction - Case
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5353
Issue 1
2N6315
2N6317
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
V
CEO(sus)
I
CEO
I
CEX
I
CBO
I
EBO
Collector – Emitter Sustaining
Voltage *
Collector Cut–off Current
Collector Cut–off Current
Collector Cut–off Current
Emitter Cut–off Current
ON CHARACTERISTICS
*
V
CE
= 4V
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
DC Current Gain
Collector – Emitter Saturation
Voltage
Base – Emitter Saturation Voltage
Base – Emitter On Voltage
DYNAMIC CHARACTERISTICS
C
ob
Output Capacitance
V
CB
= 10V
f = 1MHz
V
CE
= 10V
fT
h
fe
Current Gain – Bandwidth Product
Small Signal Current Gain
DYNAMIC CHARACTERISTICS
tr
ts
tf
Rise Time
Storage Time
Fall Time
V
CC
= 30V
I
C
= 2.5A
I
B1
= I
B
=0.25A
0.7
1.0
0.8
µS
I
C
= 0.25A
f = 1MHz
V
CE
= 4V
f = 1kHz
I
C
= 0.5A
20
—
4.0
MHz
I
E
= 0
300
pF
V
CE
= 4V
V
CE
= 4V
I
C
= 4A
I
C
= 7A
I
C
= 7A
V
CE
= 4V
I
C
= 0.5A
I
C
= 2.5A
I
C
= 7.0A
I
B
= 0.4A
I
B
= 1.75A
I
B
= 1.75A
I
C
= 2.5A
35
20
4
1.0
2.0
2.5
1.5
V
100
—
I
C
= 100mA
V
CE
= 30V
V
CE
= 60V
V
CB
= 60V
V
EB
= 5V
I
B
= 0
I
B
= 0
V
BE(off)
= 1.5V
T
C
= 150°C
I
E
= 0
I
C
= 0
60
0.5
0.25
2.0
0.25
1.0
mA
V
Test Conditions
Min.
Typ.
Max.
Unit
Notes
*Pulse test: t = 300µs , Duty Cycle = 2%
p
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5353
Issue 1
Microcontroller MCU
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