HB52R329E22-A6F datasheet, PDF

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HB52R329E22-A6F: Description256 MB Registered SDRAM DIMM 32-Mword 】 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M 】 4 Components) PC100 SDRAM; Categorystorage storage; File Size420KB，66 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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HB52R329E22-A6F Overview

256 MB Registered SDRAM DIMM 32-Mword 】 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M 】 4 Components) PC100 SDRAM

HB52R329E22-A6F Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ELPIDA
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	7.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	2415919104 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	168
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	55 °C
Minimum operating temperature
organize	32MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.767 A
Maximum slew rate	3.125 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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HB52R329E22-F

Description

Features

256 MB Registered SDRAM DIMM

32-Mword

72-bit, 100 MHz Memory Bus, 2-Bank Module

(36 pcs of 16 M

4 Components)

PC100 SDRAM

E0112H10 (1st edition)

(Previous ADE-203-1046A (Z))

Feb. 28, 2001

The HB 52R 329E22 belongs to 8-byte DI MM (D ual In- line Memory Module) fa mily, and has bee n deve loped

as an optimiz ed main memory solution for 8-byte proc essor applica tions. The HB 52R 329E22 is a 16M

2-ba nk S ynchronous Dyna mic R AM Module, mounted 36 piec es of 64-Mbit S DRA M (H M5264405F TB )

sea led in TC P pac kage and 1 piec e of P LL cloc k drive r (2510) , 3 piec es re giste r drive r (162835) , 1 piec e of

inver te r and 1 piec e of ser ia l EEP RO M (2- kbit EEP RO M) for P rese nce De te ct (P D). An outline of the

HB 52R 329E22 is 168-pin socke t type pac kage (dua l lea d out). The ref ore, the HB 52R 329E22 make s high

density mounting possible without surf ace mount tec hnology. The HB 52R 329E22 provide s common data

inputs and outputs. Decoupling capacitors are mounted beside TCP on the module board.

Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which would be

electrical defects.

•

Fully compatible with : JEDEC standard outline registered 8-byte DIMM

: Intel PCB Reference design (Rev. 1.2)

•

168-pin socket type package (dual lead out)



Outline: 133.37 mm (length)

38.10 mm (Height)

4.80 mm (Thickness)



Lead pitch: 1.27 mm

•

3.3 V power supply

•

Clock frequency: 100 MHz (max)

•

LVTTL interface

•

Data bus width:

72 ECC

•

Single pulsed

RAS

•

4 Banks can operates simultaneously and independently

•

Burst read/write operation and burst read/single write operation capability

•

Programmable burst length: 1/2/4/8/full page

•

2 variations of burst sequence

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

HB52R329E22-A6F Related Products

	HB52R329E22-A6F	HB52R329E22-F	HB52R329E22-B6F
Description	256 MB Registered SDRAM DIMM 32-Mword 】 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M 】 4 Components) PC100 SDRAM	256 MB Registered SDRAM DIMM 32-Mword 】 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M 】 4 Components) PC100 SDRAM	256 MB Registered SDRAM DIMM 32-Mword 】 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M 】 4 Components) PC100 SDRAM
Is it Rohs certified?	incompatible	-	incompatible
Maker	ELPIDA	-	ELPIDA
Parts packaging code	DIMM	-	DIMM
package instruction	DIMM, DIMM168	-	DIMM, DIMM168
Contacts	168	-	168
Reach Compliance Code	unknow	-	unknow
ECCN code	EAR99	-	EAR99
access mode	DUAL BANK PAGE BURST	-	DUAL BANK PAGE BURST
Maximum access time	7.5 ns	-	7.5 ns
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	-	100 MHz
I/O type	COMMON	-	COMMON
JESD-30 code	R-XDMA-N168	-	R-XDMA-N168
memory density	2415919104 bi	-	2415919104 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	-	SYNCHRONOUS DRAM MODULE
memory width	72	-	72
Humidity sensitivity level	1	-	1
Number of functions	1	-	1
Number of ports	1	-	1
Number of terminals	168	-	168
word count	33554432 words	-	33554432 words
character code	32000000	-	32000000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS
Maximum operating temperature	55 °C	-	55 °C
organize	32MX72	-	32MX72
Output characteristics	3-STATE	-	3-STATE
Package body material	UNSPECIFIED	-	UNSPECIFIED
encapsulated code	DIMM	-	DIMM
Encapsulate equivalent code	DIMM168	-	DIMM168
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	-	225
power supply	3.3 V	-	3.3 V
Certification status	Not Qualified	-	Not Qualified
refresh cycle	4096	-	4096
self refresh	YES	-	YES
Maximum standby current	0.767 A	-	0.767 A
Maximum slew rate	3.125 mA	-	3.125 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V
Minimum supply voltage (Vsup)	3 V	-	3 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V
surface mount	NO	-	NO
technology	CMOS	-	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL
Terminal form	NO LEAD	-	NO LEAD
Terminal pitch	1.27 mm	-	1.27 mm
Terminal location	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED

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