Preliminary
HAT1038R, HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
•
•
•
•
For Automotive Application (at Type Code "J")
Low on-resistance
Capable of 4 V gate drive
High density mounting
REJ03G1150-0600
Rev.6.00
Aug 25, 2009
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
5 6
D D
65
87
3
12
4
2
G
4
G
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
S1
MOS1
S3
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT1038R
HAT1038RJ
Avalanche energy
HAT1038R
HAT1038RJ
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
AP Note 4
Note 1
Value
–60
±20
–3.5
–28
–3.5
—
–3.5
—
1.05
2
3
150
–55 to +150
Unit
V
V
A
A
A
—
A
—
mJ
W
W
°C
°C
E
AR Note 4
Pch
Note 2
Pch
Tch
Tstg
Note 3
PW
≤
10
μs,
duty cycle
≤
1%
1 Drive operation: When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
≤
10 s
2 Drive operation: When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
≤
10 s
Value at Tch = 25°C, Rg
≥
50
Ω
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 1 of 7
HAT1038R, HAT1038RJ
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak voltage
Gate to source leak current
HAT1038R
Zero gate voltage drain
current
HAT1038RJ
Zero gate voltage drain
current
HAT1038R
HAT1038RJ
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
5. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
I
DSS
I
DSS
I
DSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
–60
±20
—
—
—
—
—
–1.2
—
—
3
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
0.12
0.16
4.5
600
290
75
11
30
100
55
–0.98
70
Max
—
—
±10
–1
–0.1
—
–10
–2.2
0.15
0.23
—
—
—
—
—
—
—
—
–1.28
—
Unit
V
V
μA
μA
μA
μA
μA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 μA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
DS
= –48 V, V
GS
= 0
Ta = 125°C
V
DS
= –10 V, I
D
= –1 mA
I
D
= –2 A, V
GS
= –10 V
Note 5
I
D
= –2 A, V
GS
= –4 V
Note 5
I
D
= –2 A, V
DS
= –10 V
Note 5
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
V
GS
= –10 V, I
D
= –2 A,
V
DD
≅
–30 V
I
F
= –3.5 A, V
GS
= 0
Note 5
I
F
= –3.5 A, V
GS
= 0
di
F
/dt = 50 A/μs
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 2 of 7
HAT1038R, HAT1038RJ
Preliminary
Main Characteristics
Power vs. Temperature Derating
4.0
Maximum Safe Operation Area
–100
–30
10
μs
Pch (W)
I
D
(A)
Test Condition:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm), PW
≤
10 s
3.0
–10
–3
–1
–0.3
–0.1
DC
PW
=
10
0
μ
s
1m
s
Channel Dissipation
2.0
1
Dr
1.0
ive
Op
er
at
ion
Drain Current
Op
10
era
ms
tio
n(
Operation in
PW
N
o
≤
1
te 6
this area is
0s
limited by R
DS (on)
)
2
Dr
ive
Op
er
at
ion
0
0
50
100
150
200
–0.03 Ta = 25°C
1 shot pulse
–0.01
–1
–0.1 –0.3
–3
–10
–30
–100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 6:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Typical Output Characteristics
–10
–10 V
–5 V
–4 V
–10
–3.5 V
Pulse Test
–6
Typical Transfer Characteristics
I
D
(A)
I
D
(A)
–8
–8
V
DS
= 10 V
Pulse Test
–6
–3 V
Drain Current
–4
Drain Current
–4
Tc = 75°C
–2
–25°C
0
0
25°C
–2
V
GS
= –2.5 V
0
0
–2
–4
–6
–8
–10
–1
–2
–3
–4
–5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
V
DS (on)
(V)
–0.5
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
V
GS
= –4 V
–10 V
–0.4
–0.3
I
D
= –2 A
–0.2
–1 A
–0.1
–0.5 A
0.2
0.1
0.05
0.02
0.01
–0.1 –0.3
0
0
–4
–8
–12
–16
–20
–1
–3
–10
–30
–100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 3 of 7
HAT1038R, HAT1038RJ
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
0.5
Pulse Test
0.4
I
D
= –2 A
0.3
–0.5 A
0.2
V
GS
= –4 V
–2 A
0.1
–10 V
0
–40
0
40
80
120
160
–0.5 A, –1 A
–1 A
20
10
Tc = –25°C
5
25°C
2
1
0.5
75°C
Preliminary
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
V
DS
= 10 V
Pulse Test
0.2
–0.1 –0.2
–0.5
–1
–2
–5
–10
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
V
GS
= 0
f = 1 MHz
Ciss
500
200
100
50
20
10
0
–10
–20
–30
–40
–50
Crss
Coss
Body-Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
100
50
20
10
5
–0.1 –0.2
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
–0.5
–1
–2
–5
–10
Capacitance C (pF)
200
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –10 V
–25 V
–50 V
V
GS
–40
V
DS
V
DD
= –50 V
–25 V
–10 V
–8
Switching Characteristics
V
GS
(V)
0
1000
300
td(off)
100
tf
30
10
3 V = –10 V, V = –30 V
GS
DD
PW = 5
μs,
duty
≤
1 %
1
–0.5 –1
–2
–0.1 –0.2
tr
td(on)
0
–20
–4
Drain to Source Voltage
–60
–12
–80
I
D
= –3.5 A
0
8
16
24
32
–16
–100
–20
40
Gate to Source Voltage
Switching Time t (ns)
–5
–10
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 4 of 7
HAT1038R, HAT1038RJ
Reverse Drain Current vs.
Source to Drain Voltage
–10
Preliminary
Maximum Avalanche
Energy
vs.
Channel
Temperature
Derating
2.5
I
AP
= –3.5
A
V
DD
= –25
V
L =
100
μH
duty < 0.1 %
Rg
≥
50
Ω
–8
Repetitive Avalanche
Energy E
AR
(mJ)
Reverse Drain Current
I
DR
(A)
2.0
–6
–10
V
V
GS
=
0, 5 V
–5
V
1.5
–4
1.0
–2
Pulse
Test
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
0.5
0
25
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel
Temperature Tch
(°C)
Normalized Transient Thermal Impedance
vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D
=
1
0.5
0.1
0.2
0.1
0.05
0.02
0
.0
1
θch
–
f (t)
=
γ
s (t)
•
θch
–
f
θch
–
f
=
125°C/W,
Ta =
25°C
When using the glass epoxy board
(FR4
40
×
40
×
1.6 mm)
u
l
s
tp
e
0.01
P
DM
PW
T
1m
10 m
100 m
1
10
100
D
=
0.001
h
1s
o
PW
T
0.0001
10
μ
100
μ
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance
vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D
=
1
0.5
0.1
0.2
0.1
0.05
0.02
0
.0
1
θch
–
f (t)
=
γ
s (t)
•
θch
–
f
θch
–
f
=
166°C/W,
Ta =
25°C
When using the glass epoxy board
(FR4
40
×
40
×
1.6 mm)
e
0.01
P
DM
PW
T
1m
10 m
100 m
1
10
100
D
=
0.001
1s
h
p
ot
u
l
s
PW
T
0.0001
10
μ
100
μ
1000
10000
Pulse Width PW (S)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 5 of 7
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