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HAT1038RJ

Description
3.5 A, 60 V, 0.23 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size217KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

HAT1038RJ Overview

3.5 A, 60 V, 0.23 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET

HAT1038RJ Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Preliminary
HAT1038R, HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
For Automotive Application (at Type Code "J")
Low on-resistance
Capable of 4 V gate drive
High density mounting
REJ03G1150-0600
Rev.6.00
Aug 25, 2009
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
5 6
D D
65
87
3
12
4
2
G
4
G
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
S1
MOS1
S3
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT1038R
HAT1038RJ
Avalanche energy
HAT1038R
HAT1038RJ
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
AP Note 4
Note 1
Value
–60
±20
–3.5
–28
–3.5
–3.5
1.05
2
3
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
E
AR Note 4
Pch
Note 2
Pch
Tch
Tstg
Note 3
PW
10
μs,
duty cycle
1%
1 Drive operation: When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
10 s
2 Drive operation: When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
10 s
Value at Tch = 25°C, Rg
50
Ω
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 1 of 7

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HAT1038RJ HAT1038RJ-EL-E HAT1038R-EL-E HAT1038R_09 HAT1038R
Description 3.5 A, 60 V, 0.23 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.5 A, 60 V, 0.23 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.5 A, 60 V, 0.23 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.5 A, 60 V, 0.23 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.5 A, 60 V, 0.23 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation - Renesas Electronics Corporation
Parts packaging code SOIC SOT SOP - SOIC
package instruction SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 - SMALL OUTLINE, R-PDSO-G8
Contacts 8 8 8 - 8
Reach Compliance Code unknow compli compli - compli
ECCN code EAR99 EAR99 EAR99 - EAR99
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