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L2SA1037AKSLT1G

Description
Small Signal Bipolar Transistor, 0.15A I(C), PNP,
CategoryDiscrete semiconductor    The transistor   
File Size137KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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L2SA1037AKSLT1G Overview

Small Signal Bipolar Transistor, 0.15A I(C), PNP,

L2SA1037AKSLT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.15 A
ConfigurationSingle
Minimum DC current gain (hFE)270
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Features
We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
L2SA1037AKQLT1G
L2SA1037AKQLT3G
Package
SOT23
SOT23
Shipping
3000/Tape & Reel
10000/Tape & Reel
SOT– 23
1
2
L2SA1037AKQLT1G Series
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CEO
Value
–50
–60
–6.0
–150
0.2
150
-55 ~+150
Unit
V
V
V
mAdc
W
°C
°C
1
BASE
3
COLLECTOR
V
CBO
V
EBO
2
EMITTER
I
C
P
C
T
j
T
stg
DEVICE MARKING
L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I
C
= –1 mA)
Emitter–Base Breakdown Voltage
(I
E
= – 50
µA)
Collector–Base Breakdown Voltage
(I
C
= – 50
µA)
Collector Cutoff Current
(V
CB
= – 60 V)
Emitter cutoff current
(V
EB
= – 6 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= – 50 mA / – 5m A)
DC current transfer ratio
(V
CE
= – 6 V, I
C
= –1mA)
Transition frequency
(V
CE
= – 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
(V
CB
= – 12 V, I
E
= 0A, f =1MHz )
Symbol
V
V
V
(BR)CEO
Min
– 50
–6
– 60
120
Typ
––
140
4.0
Max
– 0.1
– 0.1
-0.5
560
––
5.0
Unit
V
V
V
µA
µA
V
––
MHz
pF
(BR)EBO
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
h
FE
values are classified as follows:
hFE
*
Q
120~270
R
180~390
S
270~560
Rev.O 1/4

L2SA1037AKSLT1G Related Products

L2SA1037AKSLT1G L2SA1037AKQLT1G L2SA1037AKQLT3G L2SA1037AKRLT1G L2SA1037AKRLT3G L2SA1037AKSLT3G
Description Small Signal Bipolar Transistor, 0.15A I(C), PNP, Small Signal Bipolar Transistor, 0.15A I(C), PNP, Small Signal Bipolar Transistor, 0.15A I(C), PNP, Small Signal Bipolar Transistor, 0.15A I(C), PNP, Small Signal Bipolar Transistor, 0.15A I(C), PNP, Small Signal Bipolar Transistor, 0.15A I(C), PNP,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
Configuration Single Single Single Single Single Single
Minimum DC current gain (hFE) 270 120 120 180 180 270
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
surface mount YES YES YES YES YES YES
Base Number Matches 1 1 1 1 1 1
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