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2N5617

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
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2N5617 Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

2N5617 Parametric

Parameter NameAttribute value
package instructionHERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
Base Number Matches1
2N5617
Dimensions in mm (inches).
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
Bipolar PNP Device in a
Hermetically sealed TO3
Metal Package.
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
22.23
(0.875)
max.
16.64 (0.655)
17.15 (0.675)
1
2
Bipolar PNP Device.
V
CEO
= 80V
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
I
C
= 5A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
80
5
Units
V
A
-
Hz
@ 5/2.5 (V
CE
/ I
C
)
70
70M
200
50
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
31-Jul-02

2N5617 Related Products

2N5617 2N5617.MOD
Description Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
package instruction HERMETIC SEALED, METAL, TO-3, 2 PIN FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 5 A 5 A
Collector-emitter maximum voltage 80 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 70 70
JEDEC-95 code TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2
Number of components 1 1
Number of terminals 2 2
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 70 MHz 70 MHz
Base Number Matches 1 1
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