2SC5101
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1909)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5101
200
140
6
10
4
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SC5101
10
max
10
max
140
min
50
min
∗
0.5
max
20
typ
250
typ
V
MHz
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=200V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(Ω)
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.5
I
B2
(A)
–0.5
t
on
(
µ
s)
0.24typ
t
stg
(
µ
s)
4.32typ
t
f
(
µ
s)
0.40typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
m
0m
A
20
0
mA
1
A
50m
V
C E
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l ta g e V
C E (s a t)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
=4 V )
10
A
I
B
=4
30
00
8
C ol l e c t o r C ur r en t I
C
( A)
100m
A
8
C ol l e c t o r C ur r e nt I
C
( A)
75mA
2
6
50 m A
6
4
20m A
1
2
10mA
0
I
C
= 1 0A
5A
0
0
0 .5
1.0
Ba s e C ur r en t I
B
( A)
1 .5
2 .0
0
0
0
1
2
3
4
25˚C
2
–30˚C
(Case
Te
Cas
125
˚C (
(Case
1
Ba s e - E m i t t er V o l t a ge V
BE
( V )
mp)
4
e Te
mp)
Temp
)
3.0
2
Co l l ec t or - Emi t t er Vo l ta ge V
C E
(V)
(V
C E
=4 V)
200
D C C ur r en t Ga i n h
FE
D C Cu r r e n t Ga i n h
F E
300
1 25 ˚ C
100
25˚C
– 30 ˚ C
( V
C E
= 4V)
Transient Thermal Resistance
θ
j -a
( ˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
100
1
0.5
50
50
20
0.02
0.1
0. 5
1
5
10
20
0.02
0. 1
0 .5
1
5
10
0.1
1
10
100
Time t(ms)
1 0 00 2 0 0 0
Co l l ect o r Curre nt I
C
(A )
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
40
30
Safe Operating Area
(Single Pulse)
80
Pc – Ta Derating
10
30
Co llec t o r C u r r e n t I
C
( A )
Ma x imu m P ow e r D i s s i p a t i o n P
C
( W )
10
C ut- off F r e q u e n c y f
T
(M H
Z
)
W
60
10
ith
ms
s
0m
Typ
5
D
In
C
fin
ite
he
20
40
at
si
nk
1
0 .5
Without Heatsink
Natural Cooling
10
20
Without Heatsink
0
–0.02
– 0. 1
–1
Emi t t e r C u rre nt I
E
(A )
–10
0 .1
3
5
10
50
1 00
20 0
3.5
0
0
25
50
75
10 0
1 25
150
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
Am bi e nt T e m p e r a t u r e T a ( ˚ C )
127
Domestic Chip Exchange
京公网安备 11010802033920号
EEWORLD
