2SA811C8 datasheet, PDF - EEWORLD Datasheet

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2SA811C8: DescriptionSmall Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size67KB，3 Pages; ManufacturerNEC Electronics

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2SA811C8 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3

2SA811C8 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	PLASTIC, MINIMOLD PACKAGE-3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	450
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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Description	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3	ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3
Is it Rohs certified?	incompatible	conform to	-	conform to	incompatible	conform to	incompatible	incompatible	-
package instruction	PLASTIC, MINIMOLD PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	PLASTIC, MINIMOLD PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	PLASTIC, MINIMOLD PACKAGE-3	PLASTIC, MINIMOLD PACKAGE-3	PLASTIC, MINIMOLD PACKAGE-3
Reach Compliance Code	compliant	compliant	-	compliant	compliant	compliant	compliant	compliant	unknown
Maximum collector current (IC)	0.05 A	0.05 A	-	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	50 V	50 V	-	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	450	300	-	135	135	200	300	200	135
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	-	1	1	1	1	1	1
Number of terminals	3	3	-	3	3	3	3	3	3
Maximum operating temperature	125 °C	-	-	-	125 °C	-	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	PNP	PNP	-	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	-	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	-	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.3 V	-	-	-	0.3 V	-	0.3 V	0.3 V	0.3 V
Base Number Matches	1	1	-	1	1	1	1	1	1

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