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GBU810

Description
8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size206KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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GBU810 Overview

8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBU810 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage1000 V
Maximum average input current8 A
Processing package descriptionROHS COMPLIANT, PLASTIC, GBU, 4 PIN
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Shell connectionisolation
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum non-repetitive peak forward current200 A
GBU8005
Elektronische Bauelemente
THRU
GBU810
VOLTAGE 50V ~ 1000V
8 .0 AMP Glass Passivated Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free.
GBU
3.2x3.2
CHAMFER
.139(3.53)
.133(3.37)
10
TYP
O
.874(22.2)
.860(21.8)
.160(4.1)
.140(3.5)
5
TYP
O
.752(19.1)
.720(18.3)
FEATURES
.083(2.1)
.067(1.7)
.232(5.9)
.224(5.7)
*
Surge Overload Rating -170 AMP Peak
*
Ldeal For Printed Circuit Board
Reliable Low Cost
*
Plastic Technique Construction Utilizing Molded
Plastic Material Has Underw rites
*
Flammability Classification 94V-0 Laboratory
.720(18.29)
.680(17.27)
.100(2.54)
.085(2.16)
.080(2.03)
.068(1.65)
.210
.210
.190
.190
(5.33) (5.33)
(4.83) (4.83)
.210
.190
(5.33)
(4.83)
.083(2.1)
.075(1.9)
.022(0.56)
.018(0.46)
*
Mounting Position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature unless otherwise specified
.
Resistive or inductive load, 60Hz,
For capacitive load, derate current by 20%.
o
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note2)
Rectified Current @ T
C
=100 (without heatsink)
Peak Forward Surge Current, 8.3 ms single
half Sine-wave superimposed
on rated load (JEDEC method)
Maximum Forward Voltage at 4.0A
o
Maximum DC Reverse Current Ta=25
C
o
at Rated DC Blocking Voltage Ta=125
C
I
2
t Rating for fusing (t<8.3ms)
Typical Junction Capacitance
per element (Note1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
I
2
t
C
J
JC
T
J
T
STG
GBU
8005
50
35
50
GBU
801
100
70
100
GBU
802
200
140
200
GBU
804
400
280
400
8.0
3.2
600
420
600
GBU
806
800
560
800
GBU
808
1000
700
1000
GBU
810
UNITS
V
V
V
A
A
V
µA
A
2
S
170
1.10
5.0
500
16 6
60
2.2
- 55 ~ + 150
- 55 ~ + 150
o
pF
C/W
o
C
o
C
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink.
ht t p:/ /www. SeCoSGmbH. com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2

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