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GBJ810

Description
8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size49KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
GBJ8005
THRU
GBJ810
8 Amp
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
GBJ
I
A
H
Features
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Device
Marking
Maximum
Reccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Catalog
Number
GBJ8005
GBJ801
GBJ802
GBJ804
GBJ806
GBJ808
GBJ810
D
F
B
E
G
---
---
---
---
---
---
---
+
P
L
C
M
N
O
O
DIMENSIONS
INCHES
MIN
1.170
.780
.670
.019
.430
.090
.120
.130
.170
.100
.020
.080
.040
.390
.290
.150
MM
MIN
29.70
19.70
17.00
4.70
10.80
2.30
3.10
3.40
4.40
2.50
0.60
2.00
0.90
9.80
7.30
3.80
K
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
8A
Tc = 110°C
Current
Peak Forward Surge
I
FSM
170A
8.3ms, half sine
Current
Maximum
I
FM
= 4.0A
1.0V
Instantaneous
V
F
Forward Voltage
T
J
= 25°C
Maximum DC
Reverse Current At
I
R
5 µA
T
J
= 25°C
Rated DC Blocking
500uA T
J
= 125°C
Voltage
Typical thermal
resistance
R
OJC
1.6
°C
/W
Typical Junction
C
J
55 pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
MAX
1.190
.800
.710
.019
.440
.110
.130
.150
.190
.110
.030
.090
.040
.400
.300
.170
MAX
30.30
20.30
18.00
4.90
11.20
2.70
3.40
3.80
4.80
2.90
0.80
2.40
1.10
10.20
7.70
4.20
NOTE
www.cnelectr.com

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