5713
DUAL PERIPHERAL AND POWER DRIVER
5713
Data Sheet
29307B
DUAL PERIPHERAL AND POWER DRIVER
— TRANSIENT PROTECTED OUTPUTS
Supply Voltage, V
CC
. . . . . . . . . . . . . .
7.0 V
Input Voltage, V
IN
. . . . . . . . . . . . . . . . .
30 V
Output Off-State Voltage,
V
OFF
. . . . . . . . . . . . . . . . . . . . . . . .
80 V
Output On-State Sink Current,
I
ON
. . . . . . . . . . . . . . . . . . . . . .
600 mA
Suppression Diode Off-State Voltage,
V
OFF
. . . . . . . . . . . . . . . . . . . . . . . .
80 V
Suppression Diode On-State Current,
I
ON
. . . . . . . . . . . . . . . . . . . . . .
600 mA
Power Dissipation at T
A
= 25°C, P
D
Package . . . . . . . . . . . . . . . . . . .
1.5 W*
Each Driver . . . . . . . . . . . . . . . . .
0.8 W
Operating Free-Air Temperature Range,
T
A
. . . . . . . . . . . . . . . . .
-20
°
C to +85
°
C
Storage Temperature Range,
T
S
. . . . . . . . . . . . . . . .
-55
°
C to +150
°
C
*Derate at the rate of 12.5 mW/°C above
T
A
= 25°C.
T
C
U Y
D L
O N
R O
P E
D C
E N
U E
N ER
I
T F
N E
O R
C R
S O
I
D F
—
The UDN5713M dual driver is ideally suited for interface between
low-level or high-level logic and high-current/high-voltage loads.
Typical applications include driving peripheral loads such as incandes-
cent lamps, light-emitting diodes, memories, and heaters with a load
current of up to 600 mA.
The integral transient suppression diodes allow the use of these
drivers with inductive loads such as relays, solenoids, or stepping
motors without the need for discrete diodes. Similar devices with four
drivers per package are the 5703 and 5706.
Dwg. No. A-9789
This “mini-DlP” dual peripheral and power driver is a bipolar
monolithic integrated circuit incorporating NOR logic gates, high-
current switching transistors, and transient suppression diodes on the
same chip. The two output transistors are capable of simultaneously
sinking 300 mA continuously at ambient temperatures of up to +70°C.
In the OFF state, this driver will withstand at least 80 V.
FEATURES
s
s
s
s
ABSOLUTE MAXIMUM RATINGS
DTL/TTL/PMOS/CMOS Compatible Inputs
Low Input Current
300 mA Continuous Output Current
Stand-off Voltage of 80 V
Always order by complete part number, e.g.,
UDN5713M
.
5713
DUAL PERIPHERAL AND POWER DRIVER
RECOMMENDED OPERATING CONDITIONS
Min.
Supply Voltage (V
CC
)
Operating Temperature Range
Current into any output (ON state)
4.75
0
—
Nom.
5.0
+25
—
Max.
5.25
+85
300
Units
V
°C
mA
ELECTRICAL CHARACTERISTICS over operating temperature range
(unless otherwise noted).
Test Conditions
Characteristic
“1” Input Voltage
“0” Input Voltage
“0” Input Current at all
Inputs except Strobe
“0” Input Current at Strobe
“1” Input Current at all
Inputs except Strobe
“1” Input Current at Strobe
Input Clamp Voltage
Symbol
V
IN(1)
V
IN(0)
I
IN(0)
I
IN(0)
I
IN(1)
I
IN(1)
V
IK
Temp.
—
—
—
—
—
—
—
V
CC
MIN
MIN
MAX
MAX
MAX
MAX
MIN
Driven
Input
—
—
0.4 V
0.4 V
30 V
30 V
-12 mA
Other
Input
—
—
30 V
30 V
0V
0V
—
Output
—
—
—
—
—
—
—
Min.
2.0
—
—
—
—
—
—
Limits
Typ.
—
—
-50
-100
—
—
—
Max. Units
—
0.8
-100
-200
10
20
-1.5
V
V
µA
µA
µA
µA
V
Notes
—
—
2
—
2
—
—
SWITCHING CHARACTERISTICS at V
CC
= 5.0 V, T
A
= 25°C
Limits
Characteristic
Turn-on Delay Time
Symbol
t
pd0
Test Conditions
V
S
= 70 V, R
L
= 465
Ω
(10 Watts),
C
L
= 15 pF
Turn-off Delay Time
t
pd1
V
S
= 70 V, R
L
= 465
Ω
(10 Watts),
C
L
= 15 pF
NOTES: 1. Typical values are at V
CC
= 5.0 V, T
A
= 25°C.
2. Each input tested separately.
3. Voltage values shown in the test circuit waveforms are with respect to network ground terminal.
4. Capacitance values specified include probe and test fixture capacitance.
Min.
—
Typ.
200
Max. Units
500
ns
Notes
3
—
300
750
ns
3
INPUT PULSE CHARACTERISTICS
V
IN(0)
=
0 V
V
IN(1)
=
3.5 V
t
f
= 7 ns
t
r
= 14 ns
t
p
= 1
µs
PRR = 500 kHz
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
W
Copyright © 1976, 1997, Allegro MicroSystems, Inc.
5713
DUAL PERIPHERAL AND POWER DRIVER
ELECTRICAL CHARACTERISTICS over operating temperature range
(unless otherwise noted).
Test Conditions
Characteristic
“1” Output Reverse Current
“0” Output Voltage
Diode Leakage Current
Diode Forward Voltage Drop
“1” Level Supply Current
“0” Level Supply Current
Symbol
l
OFF
V
ON
I
LK
V
D
l
CC(1)
l
CC(0)
Temp.
—
—
—
—
NOM
NOM
NOM
NOM
V
CC
MIN
OPEN
MIN
MIN
NOM
NOM
MAX
MAX
Driven
Input
2.0 V
2.0 V
0.8 V
0.8 V
0V
V
CC
5.0 V
0V
Other
Input
0V
0V
0.8 V
0.8 V
0V
V
CC
5.0 V
0V
Output
80 V
80 V
150 mA
300 mA
OPEN
—
—
—
Min.
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
0.35
0.5
—
1.5
8.0
36
Max. Units
100
100
0.5
0.7
200
1.75
13
50
µA
µA
V
V
µA
V
mA
mA
Notes
—
—
—
—
3
4
1, 2
1, 2
NOTES: 1. Typical values are at V
CC
= 5.0 V, T
A
= 25°C.
2. Per package.
3. Diode leakage current measured at V
R
= 80 V.
4. Diode forward voltage drop measured at I
F
= 300 mA.
5. Capacitance values specified include probe and test fixture capacitance.
Dwg. No. A-9123A
Dwg. No. A-7628C
5713
DUAL PERIPHERAL AND POWER DRIVER
Dimensions in Inches
8
5
0.014
0.008
0.430
0.280
0.240
MAX
0.300
BSC
1
0.070
0.045
4
0.005
0.400
0.355
MIN
0.210
MAX
0.015
MIN
0.150
0.115
0.022
0.014
0.100
BSC
Dwg. MA-001-8A in
Dimensions in Millimeters
(Based on 1” = 25.4 mm)
8
5
0.355
0.204
10.92
7.11
6.10
MAX
7.62
BSC
1
1.77
1.15
4
0.13
10.16
9.02
MIN
5.33
MAX
0.39
MIN
3.81
2.93
0.558
0.356
2.54
BSC
Dwg. MA-001-8A mm
Allegro MicroSystems, Inc. reserves the right to make, from time to time,
such departures from the detail specifications as may be required to permit
improvements in the design of its products.
NOTES: 1. Lead thickness is measured at seating plane or below.
The information included herein is believed to be accurate and reliable.
2. Lead spacing tolerance is non-cumulative.
However, Allegro MicroSystems, Inc. assumes no responsibility for its use; nor
3. Exact body and lead configuration at vendor’s option
for any infringements of patents or other rights of third parties which may result
within limits shown.
from its use.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
京公网安备 11010802033920号
EEWORLD
