DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC369
PNP medium power transistor
Product specification
Supersedes data of 1997 Feb 28
1999 Apr 26
Philips Semiconductors
Product specification
PNP medium power transistor
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 20 V).
APPLICATIONS
•
General purpose switching and amplification
•
Power applications such as audio output stages.
1
handbook, halfpage
2
3
BC369
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
2
1
3
DESCRIPTION
NPN medium power transistor in a TO-92; SOT54 plastic
package. PNP complement: BC368.
Fig.1
MAM285
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−32
−20
−5
−1
−2
−200
0.83
+150
150
+150
V
V
V
A
A
mA
W
°C
°C
°C
UNIT
1999 Apr 26
2
Philips Semiconductors
Product specification
PNP medium power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−25
V
I
E
= 0; V
CB
=
−25
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−5
mA; V
CE
=
−10
V
I
C
=
−500
mA; V
CE
=
−1
V; see Fig.2
I
C
=
−1
A; V
CE
=
−1
V; see Fig.2
DC current gain
BC369-16
BC369-25
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage I
C
=
−1
A; I
B
=
−100
mA
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
=
−5
mA; V
CE
=
−10
V
I
C
=
−1
A; V
CE
=
−1
V
I
C
= 500 mA;
V
CE
= 1 V
I
C
=
−500
mA; V
CE
=
−1
V; see Fig.2
100
160
−
−
−
−
250
375
−0.5
−0.7
−1
−
1.6
−
−
−
50
85
60
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
150
BC369
UNIT
K/W
MAX.
−100
−10
−100
−
375
−
UNIT
nA
µA
nA
V
V
V
MHz
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 40
1999 Apr 26
3
Philips Semiconductors
Product specification
PNP medium power transistor
BC369
MGD845
400
handbook, full pagewidth
hFE
300
200
100
0
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
V
CE
=
−1
V.
Fig.2 DC current gain; typical values.
1999 Apr 26
4
Philips Semiconductors
Product specification
PNP medium power transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BC369
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
1999 Apr 26
5
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