25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, TO-72, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Parts packaging code | TO-72 |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 25 V |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 1.3 pF |
| JEDEC-95 code | TO-72 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 3N171 | 2N3796 | 2N3797 | 2N5245 | 3N169 | J304 | J309 | 3N170 | J308 | U310 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, TO-72, 3 PIN | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-18, TO-18, 3 PIN | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3 PIN | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, TO-72, 4 PIN | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, PLASTIC, TO-226AA, 3 PIN | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-226AA, 3 PIN | Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, TO-72, 3 PIN | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-226AA, 3 PIN | Transistor, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow | unknow | unknow |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | JUNCTION | METAL-OXIDE SEMICONDUCTOR | JUNCTION | JUNCTION | METAL-OXIDE SEMICONDUCTOR | JUNCTION | JUNCTION |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Is it Rohs certified? | incompatible | incompatible | incompatible | - | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W3 | - | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-MBCY-W4 | PLASTIC, TO-226AA, 3 PIN | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-PBCY-T3 | , |
| Configuration | SINGLE | Single | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - |
| Maximum feedback capacitance (Crss) | 1.3 pF | - | 0.8 pF | 1 pF | 1.3 pF | - | 2.5 pF | 1.3 pF | 2.5 pF | - |
| JEDEC-95 code | TO-72 | - | TO-18 | TO-92 | TO-72 | TO-92 | TO-92 | TO-72 | TO-92 | - |
| JESD-30 code | O-MBCY-W3 | - | O-MBCY-W3 | O-PBCY-W3 | O-MBCY-W4 | O-PBCY-T3 | O-PBCY-T3 | O-MBCY-W3 | O-PBCY-T3 | - |
| Number of components | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| Number of terminals | 3 | - | 3 | 3 | 4 | 3 | 3 | 3 | 3 | - |
| Operating mode | ENHANCEMENT MODE | DEPLETION MODE | ENHANCEMENT MODE | DEPLETION MODE | ENHANCEMENT MODE | DEPLETION MODE | DEPLETION MODE | ENHANCEMENT MODE | DEPLETION MODE | - |
| Package body material | METAL | - | METAL | PLASTIC/EPOXY | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY | METAL | PLASTIC/EPOXY | - |
| Package shape | ROUND | - | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | - |
| Package form | CYLINDRICAL | - | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | - |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| Terminal form | WIRE | - | WIRE | WIRE | WIRE | THROUGH-HOLE | THROUGH-HOLE | WIRE | THROUGH-HOLE | - |
| Terminal location | BOTTOM | - | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - |
| Transistor component materials | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | - |
| Maximum operating temperature | - | 200 °C | 200 °C | - | - | 150 °C | 125 °C | - | 125 °C | 150 °C |
| Maximum power dissipation(Abs) | - | 0.2 W | 0.2 W | - | - | 0.35 W | 0.4 W | - | 0.4 W | 0.5 W |
| Maker | - | - | - | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
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