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2N5245

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size66KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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2N5245 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3 PIN

2N5245 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
FET technologyJUNCTION
Maximum feedback capacitance (Crss)1 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Base Number Matches1

2N5245 Related Products

2N5245 2N3796 2N3797 3N171 3N169 J304 J309 3N170 J308 U310
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3 PIN Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-18, TO-18, 3 PIN 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, TO-72, 3 PIN Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, TO-72, 4 PIN Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, PLASTIC, TO-226AA, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-226AA, 3 PIN Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, TO-72, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-226AA, 3 PIN Transistor,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow unknow unknow
FET technology JUNCTION METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR JUNCTION JUNCTION METAL-OXIDE SEMICONDUCTOR JUNCTION JUNCTION
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maker Motorola ( NXP ) - - - Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction CYLINDRICAL, O-PBCY-W3 - CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W4 PLASTIC, TO-226AA, 3 PIN CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-PBCY-T3 ,
Configuration SINGLE Single SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Maximum feedback capacitance (Crss) 1 pF - 0.8 pF 1.3 pF 1.3 pF - 2.5 pF 1.3 pF 2.5 pF -
JEDEC-95 code TO-92 - TO-18 TO-72 TO-72 TO-92 TO-92 TO-72 TO-92 -
JESD-30 code O-PBCY-W3 - O-MBCY-W3 O-MBCY-W3 O-MBCY-W4 O-PBCY-T3 O-PBCY-T3 O-MBCY-W3 O-PBCY-T3 -
Number of components 1 - 1 1 1 1 1 1 1 -
Number of terminals 3 - 3 3 4 3 3 3 3 -
Operating mode DEPLETION MODE DEPLETION MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE DEPLETION MODE DEPLETION MODE ENHANCEMENT MODE DEPLETION MODE -
Package body material PLASTIC/EPOXY - METAL METAL METAL PLASTIC/EPOXY PLASTIC/EPOXY METAL PLASTIC/EPOXY -
Package shape ROUND - ROUND ROUND ROUND ROUND ROUND ROUND ROUND -
Package form CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL -
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Terminal form WIRE - WIRE WIRE WIRE THROUGH-HOLE THROUGH-HOLE WIRE THROUGH-HOLE -
Terminal location BOTTOM - BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM -
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maximum operating temperature - 200 °C 200 °C - - 150 °C 125 °C - 125 °C 150 °C
Maximum power dissipation(Abs) - 0.2 W 0.2 W - - 0.35 W 0.4 W - 0.4 W 0.5 W
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