The UT54ACS374 and the UT54ACTS374 are non-inverting
octal D type flip-flops with three-state outputs designed for driv-
ing highly capacitive or relatively low-impedance loads. The
device is suitable for buffer registers, I/O ports, and bidirectional
bus drivers.
The eight flip-flops are edge triggered D-type flip-flops. On the
positive transition of the clock the Q outputs will follow the data
(D) inputs.
An output-control input (OC) places the eight outputs in either
a normal logic state (high or low logic level) or a high-impedance
state. The high-impedance third state and increased drive pro-
vide the capability to drive the bus line in a bus-organized system
without the need for interface or pull-up components.
The output control OC does not affect the internal operations of
the flip-flops. Old data can be retained or new data can be en-
tered while the outputs are off.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUTS
OC
L
L
L
H
CLK
↑
↑
L
X
nD
H
L
X
X
OUTPUT
nQ
H
L
nQ
0
Z
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
OC
1Q
1D
2D
2Q
3Q
3D
4D
4Q
V
SS
20-Pin DIP
Top View
OC
1Q
1D
2D
2Q
3Q
3D
4D
4Q
V
SS
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
DD
8Q
8D
7D
7Q
6Q
6D
5D
5Q
CLK
20-Lead Flatpack
Top View
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
DD
8Q
8D
7D
7Q
6Q
6D
5D
5Q
CLK
LOGIC SYMBOL
OC
CLK
(1)
(11)
EN
C1
1D (3)
(4)
2D
3D (7)
(8)
4D
5D (13)
6D (14)
7D (17)
8D (18)
1D
(2)
1Q
(5)
2Q
(6) 3Q
(9)
(12)
(15)
(16)
(19)
4Q
5Q
6Q
7Q
8Q
1
LOGIC DIAGRAM
8D
(18)
7D
(17)
6D
(14)
5D
(13)
4D
(8)
3D
(7)
2D
(4)
1D
(3)
CLK OC
(11) (1)
DC
Q
D C
Q
DC
Q
D C
Q
D C
Q
D C
Q
D C
Q
D C
Q
(19)
8Q
7Q
(16)
(15)
6Q
(12)
5Q
4Q
(9)
3Q
(6)
2Q
(5)
(2)
1Q
2
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
×C
3
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Three-state output leakage current
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100μA
I
OH
= -8.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
1.9
10
1.6
mW/
MHz
μA
mA
-8
mA
.7V
DD
V
DD
- 0.25
-20
20
.5V
DD
.7V
DD
-1
1
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
0.40
0.25
V
V
OH
V
μA
I
OZ
I
OS
I
OL
-200
8
200
mA
mA
4
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
AD-DC rectification, precision rectification:1. What are the differences between a rectifier bridge, four diode rectification, and op amp rectification?2. After rectification, why is the positive half...
Just as the title says.
I opened the battery pack and saw a protection circuit inside, but I couldn't figure out its circuit diagram for the moment. Firstly, it was a surface-mounted circuit, and seco...
As the market is rushing to buy, as a consumer, you still need to be calm and scientifically analyze when choosing LEDs, and choose the light source and lamps with the best cost-effectiveness. Here ar...
In the development of MCU embedded systems, debugging is essential. For some developers who lack expensive debugging equipment, they need to find another way. Therefore, serial port debugging componen...
Tesla and BYD, vying for dominance in the global electric vehicle market, are reportedly considering adopting Samsung's AMOLED (active-matrix organic light-emitting diode) technology for their next...[Details]
Flip-chip and ball grid array (BGA) are two widely used packaging technologies in the electronics industry. Each has its own advantages and limitations, and in some cases, they can complement each ...[Details]
introduction
With the development of digital and network technologies, broadcasting technology has become increasingly diversified, with the most significant trend being the transition from an...[Details]
According to foreign media reports, BMW has just been granted a patent for a screen that could cover the entire roof. BMW hopes to transform at least a portion of the vehicle's headliner into a dis...[Details]
On August 18th, Galaxis, a specialist in integrated intelligent intralogistics robotics, officially unveiled its next-generation, ultra-narrow aisle forklift mobile robot, the "VFR Ultra-Narrow Ser...[Details]
Electric vehicles are powered by electricity, and charging is a device that supplements the vehicle's energy source. It is common to need to recharge the vehicle when driving. But can you charge th...[Details]
A half-bridge is an inverter topology for converting DC to AC. A typical half-bridge circuit consists of two controller switches, a three-wire DC power supply, two feedback diodes, and two capacito...[Details]
With the support and encouragement of national policies, some Internet car manufacturers have also joined the new energy vehicle manufacturing industry. From the perspective of new car manufacturer...[Details]
introduction
The widespread use of air conditioner communication circuits began with the rise of household inverter air conditioners. With China's energy conservation and emission reduction in...[Details]
introduction
In recent years, with the increasing number of high-rise buildings, the demand for elevators has also increased. Currently, the elevators we use most often use LED dot array displ...[Details]
Arm helps automakers bring new models to market at least a year earlier.
Zena CSS accelerates software and silicon development, enabling faster and more efficient delivery of AI cap...[Details]
Anyone who has driven a pure electric vehicle will find that it starts much faster than a fuel vehicle. So why do pure electric vehicles start so quickly?
We all know that an engine's to...[Details]
Challenges come from multiple dimensions, and data centers on wheels require more rigorous testing.
Comparing the past, present, and future of automobiles, one clear trend emerges: cars ...[Details]
Preface
Embedded systems have been widely used in mobile phones, wristbands, tablet computers, and other devices. However, due to the limited processing performance of their central processing...[Details]
According to reports from Xinhua News Agency, Tianjin University official website and other media, Chinese researchers have recently broken through the bottleneck of energy density and application ...[Details]
Discrete Device
京公网安备 11010802033920号
EEWORLD
