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5962-8863401XA

Description
EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28, CERAMIC, DIP-28
Categorystorage    storage   
File Size104KB,24 Pages
ManufacturerXicor Inc.
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5962-8863401XA Overview

EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28, CERAMIC, DIP-28

5962-8863401XA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCERAMIC, DIP-28
Reach Compliance Codeunknown
Maximum access time120 ns
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-GDIP-T28
JESD-609 codee0
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Output characteristics3-STATE
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
page size64 words
Parallel/SerialPARALLEL
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height5.9 mm
Maximum standby current0.00035 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb) - hot dipped
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
switch bitYES
width15.24 mm
Maximum write cycle time (tWC)10 ms
Base Number Matches1
X28HC256
256K
X28HC256
5 Volt, Byte Alterable E
2
PROM
DESCRIPTION
32K x 8 Bit
FEATURES
Access Time: 70ns
Simple Byte and Page Write
— Single 5V Supply
— No External High Voltages or V
PP
Control
Circuits
— Self-Timed
— No Erase Before Write
— No Complex Programming Algorithms
—No Overerase Problem
Low Power CMOS:
— Active: 60mA
— Standby: 500µA
Software Data Protection
— Protects Data Against System Level
Inadvertent Writes
High Speed Page Write Capability
Highly Reliable Direct Write
Cell
— Endurance: 1 Million Write Cycles
— Data Retention: 100 Years
Early End of Write Detection
DATA
Polling
— Toggle Bit Polling
The X28HC256 is a second generation high perfor-
mance CMOS 32K x 8 E
2
PROM. It is fabricated with
Xicor’s proprietary, textured poly floating gate tech-
nology, providing a highly reliable 5 Volt only nonvolatile
memory.
The X28HC256 supports a 128-byte page write opera-
tion, effectively providing a 24µs/byte write cycle and
enabling the entire memory to be typically rewritten in
less than 0.8 seconds. The X28HC256 also features
DATA
Polling and Toggle Bit Polling, two methods of
providing early end of write detection. The X28HC256
also supports the JEDEC standard Software Data Pro-
tection feature for protecting against inadvertent writes
during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum
1,000,000 write cycles per byte and an inherent data
retention of 100 years.
PIN CONFIGURATION
PLASTIC DIP
CERDIP
FLAT PACK
SOIC
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
X28HC256
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
5
6
7
8
9
10
11
12
X28HC256
4
3
2
1 32 31 30
29
28
27
26
25
24
23
22
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
A2
A1
A0
I/O0
I/O1
I/O2
NC
VSS
NC
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
LCC
PLCC
VCC
WE
A7
A12
A14
NC
A13
TSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A3
A4
A5
A6
A7
A12
A14
NC
VCC
NC
WE
A13
A8
A9
A11
OE
X28HC256
13
21
14 15 16 17 18 19 20
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
3859 ILL F22
3859 FHD F03
3859 FHD F02
©Xicor, Inc. 1991, 1995 Patents Pending
3859-2.8 2/24/99 T1/C0/D0 EW
1
Characteristics subject to change without notice

5962-8863401XA Related Products

5962-8863401XA 5962-8863401UC 5962-8863401ZC
Description EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28, CERAMIC, DIP-28 EEPROM, 32KX8, 120ns, Parallel, CMOS, PGA-28 EEPROM, 32KX8, 120ns, Parallel, CMOS, CDFP28, CERAMIC, FP-28
package instruction CERAMIC, DIP-28 PGA-28 CERAMIC, FP-28
Reach Compliance Code unknown unknown unknown
Maximum access time 120 ns 120 ns 120 ns
command user interface NO NO NO
Data polling YES YES YES
Durability 10000 Write/Erase Cycles 10000 Write/Erase Cycles 10000 Write/Erase Cycles
JESD-30 code R-GDIP-T28 R-XPGA-P28 R-CDFP-F28
JESD-609 code e0 e4 e4
memory density 262144 bit 262144 bit 262144 bit
Memory IC Type EEPROM EEPROM EEPROM
memory width 8 8 8
Number of functions 1 1 1
Number of terminals 28 28 28
word count 32768 words 32768 words 32768 words
character code 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
organize 32KX8 32KX8 32KX8
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material CERAMIC, GLASS-SEALED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
encapsulated code DIP PGA DFP
Encapsulate equivalent code DIP28,.6 PGA28,5X6 FL28,.4
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE GRID ARRAY FLATPACK
page size 64 words 64 words 64 words
Parallel/Serial PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V
Programming voltage 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
Filter level MIL-STD-883 MIL-STD-883 MIL-STD-883
Maximum seat height 5.9 mm 2.79 mm 3.3 mm
Maximum standby current 0.00035 A 0.00035 A 0.00035 A
Maximum slew rate 0.08 mA 0.08 mA 0.08 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount NO NO YES
technology CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) - hot dipped GOLD GOLD
Terminal form THROUGH-HOLE PIN/PEG FLAT
Terminal pitch 2.54 mm 2.54 mm 1.27 mm
Terminal location DUAL PERPENDICULAR DUAL
switch bit YES YES YES
Maximum write cycle time (tWC) 10 ms 10 ms 10 ms
Base Number Matches 1 1 1
width 15.24 mm 14 mm -

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