5962-9855201QYC datasheet, PDF

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5962-9855201QYC: DescriptionRISC Microcontroller, 32-Bit, 12MHz, CMOS, CQFP132, QFP-132; CategoryThe embedded processor and controller Microcontrollers and processors; File Size317KB，37 Pages; ManufacturerCobham PLC

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5962-9855201QYC Overview

RISC Microcontroller, 32-Bit, 12MHz, CMOS, CQFP132, QFP-132

5962-9855201QYC Parametric

Parameter Name	Attribute value
package instruction	QFP-132
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Has ADC	NO
Address bus width	20
bit size	32
DAC channel	NO
DMA channel	NO
External data bus width	16
JESD-30 code	S-CQFP-F132
JESD-609 code	e4
length	24.13 mm
Number of I/O lines	113
Number of terminals	132
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
PWM channel	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFF
Encapsulate equivalent code	QFL132,.9SQ,25
Package shape	SQUARE
Package form	FLATPACK
power supply	5 V
Certification status	Qualified
RAM (bytes)
rom(word)	0
Filter level	MIL-PRF-38535 Class Q
Maximum seat height	2.794 mm
speed	12 MHz
Maximum slew rate	50 mA
Maximum supply voltage	5.5 V
Minimum supply voltage	4.5 V
Nominal supply voltage	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	FLAT
Terminal pitch	0.65 mm
Terminal location	QUAD
width	24.13 mm
uPs/uCs/peripheral integrated circuit type	MICROCONTROLLER, RISC
Base Number Matches	1

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REVISIONS

LTR

DESCRIPTION

Add case outline Z. Editorial changes throughout. - tvn

Update boilerplate to MIL-PRF-38535 requirements.- LTG

Switch pin symbols for pin numbers 113 and 115 on figure 2 terminal connections,

case outlines Y and Z on sheet 19. Update boilerplate to MIL-PRF-38535

requirements. - LTG

DATE (

YR-MO-DA

)

98-12-10

04-02-02

06-04-06

APPROVED

Monica L. Poelking

Thomas M. Hess

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

REV

SHEET

PREPARED BY

Larry T. Gauder

CHECKED BY

Monica L. Poelking

APPROVED BY

Monica L. Poelking

PMIC N/A

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

http://www.dscc.dla.mil

DRAWING APPROVAL DATE

98-05-18

REVISION LEVEL

MICROCIRCUIT, DIGITAL, CMOS, RADIATION

HARDENED MICROCONTROLLER, MONOLITHIC

SILICON

SIZE

CAGE CODE

AMSC N/A

SHEET

67268

5962-98552

DSCC FORM 2233

APR 97

5962-E359-06

1.3 Absolute maximum ratings. 1/

DC supply voltage (V

) ....................................................................................... -0.3 V to +7.0 V

Voltage on any pin (V

I/O

) ....................................................................................... -0.3 V to V

+0.3 V

DC input current (I

) ..............................................................................................

±10

Storage temperature (T

STG

) .................................................................................. -65°C to +150°C

Latchup immunity (I

) ..........................................................................................

±150

mA 2/

Maximum power dissipation (P

) .......................................................................... 600 mW

Maximum junction temperature (T

) ...................................................................... +175°C

Thermal resistance, junction-to-case (θ

) ............................................................ 10°C/W 2/

1.4 Recommended operating conditions.

DC supply voltage (V

) ........................................................................................ 4.5 V to 5.5 V

Temperature range (T

)......................................................................................... -55°C to +125°C

DC input voltage (V

) ............................................................................................ 0 V to V

1.5 Radiation features.

Maximum total dose available (dose rate = 50 – 300 krad/s).............................

≥

1 x 10 Rads (Si)

Single event phenomenon (SEP) effective

linear energy threshold, no upsets or latchup (see 4.4.4.4).......................... 55 MeV/(mg/cm

)

Dose rate upset (20 ns pulse)............................................................................ 3/

Dose rate latchup .............................................................................................. 3/

Dose rate survivability........................................................................................ 3/

Neutron irradiation ............................................................................................. 4/

1.6 Digital logic testing for device classes Q and V.

Fault coverage measurement of manufacturing

logic tests (MIL-STD-883, test method 5012).................................................... 83.7 percent

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 -

MIL-STD-1835 -

Test Method Standard Microcircuits.

Interface Standard Electronic Component Case Outlines.

_________

Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

2/ Test per MIL-STD-883, method 1012.

3/ When characterized as a result of the procuring activities request, the condition will be specified.

4/ When a value is determined per customer requirements it shall be specified.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-98552

SHEET

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from

the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in

MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 and figure 1 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.

3.2.3 Block diagram. The block diagram shall be as specified on figure 3.

3.2.4 Test circuit and timing waveforms. The test circuit and timing waveforms shall be as specified on figure 4.

3.2.5 Radiation exposure connections. The radiation exposure connections shall be as specified on figure 5.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full

case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table IA.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be

in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of

compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103

(see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this

drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and

herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-98552

SHEET

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or

for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product

(see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the

option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 105 (see MIL-PRF-38535, appendix A).

4. VERIFICATION

4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with

MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan

shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in

accordance with MIL-PRF-38535, appendix A.

4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted

on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in

accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.

4.2.1 Additional criteria for device class M.

Burn-in test, method 1015 of MIL-STD-883.

(1)

Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level

control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify

the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method

1015 of MIL-STD-883.

= +125°C, minimum.

(2)

Interim and final electrical test parameters shall be as specified in table IIA herein.

4.2.2 Additional criteria for device classes Q and V.

The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the

device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under

document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

method 1015 of MIL-STD-883.

Interim and final electrical test parameters shall be as specified in table IIA herein.

Additional screening for device class V beyond the requirements of device class Q shall be as specified in

MIL-PRF-38535, appendix B.

4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in

accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups

A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-98552

SHEET

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