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BT139B-800F

Description
TRIAC, 800V V(DRM), 16A I(T)RMS,
CategoryAnalog mixed-signal IC    Trigger device   
File Size52KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BT139B-800F Overview

TRIAC, 800V V(DRM), 16A I(T)RMS,

BT139B-800F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codenot_compliant
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current25 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current30 mA
JESD-609 codee3
Maximum leakage current0.5 mA
Humidity sensitivity level1
Maximum on-state voltage1.6 V
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum rms on-state current16 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Trigger device typeTRIAC
Base Number Matches1
Philips Semiconductors
Product specification
Triacs
BT139B series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT139B-
BT139B-
BT139B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500
500F
500G
500
16
140
600
600F
600G
600
16
140
800
800F
800G
800
16
140
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
main terminal 1
main terminal 2
gate
main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2
1
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
99 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
16
140
150
98
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.100

BT139B-800F Related Products

BT139B-800F BT139B-600G
Description TRIAC, 800V V(DRM), 16A I(T)RMS, TRIAC, 600V V(DRM), 16A I(T)RMS,
Is it Rohs certified? conform to conform to
Reach Compliance Code not_compliant not_compliant
Critical rise rate of minimum off-state voltage 50 V/us 200 V/us
Maximum DC gate trigger current 25 mA 50 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V
Maximum holding current 30 mA 60 mA
JESD-609 code e3 e3
Maximum leakage current 0.5 mA 0.5 mA
Humidity sensitivity level 1 1
Maximum on-state voltage 1.6 V 1.6 V
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Maximum rms on-state current 16 A 16 A
Off-state repetitive peak voltage 800 V 600 V
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Trigger device type TRIAC TRIAC
Base Number Matches 1 1
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