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BUK9222-55A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size109KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BUK9222-55A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK9222-55A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codenot_compliant
ConfigurationSingle
Maximum drain current (Abs) (ID)48 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)103 W
surface mountYES
Base Number Matches1
BUK9222-55A
TrenchMOS™ logic level FET
Rev. 01 — 17 April 2001
M3D300
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™
1
technology, featuring very low on-state resistance.
Product availability:
BUK9222-55A in SOT428 (D-PAK).
2. Features
s
s
s
s
TrenchMOS™ technology
Q101 compliant
175
°C
rated
Logic level compatible.
3. Applications
s
Automotive and general purpose power switching:
x
12 V and 24 V loads
x
Motors, lamps and solenoids.
c
c
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428 (D-PAK), simplified outline and symbol
Description
gate (g)
mb
d
Simplified outline
Symbol
drain (d)
source (s)
mounting base;
connected to
drain (d)
g
s
MBB076
2
1
Top view
3
MBK091
SOT428 (D-PAK)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
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