BYW29-200M-ISO datasheet, PDF - EEWORLD Datasheet

BYW29-200M-ISO: DescriptionRECTIFIER DIODE,200V V(RRM),TO-220AB; CategoryDiscrete semiconductor diode; File Size47KB，2 Pages; ManufacturerSEMELAB

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BYW29-200M-ISO Overview

RECTIFIER DIODE,200V V(RRM),TO-220AB

Parameter Name	Attribute value
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
Maximum non-repetitive peak forward current	80 A
Number of components	1
Maximum operating temperature	200 °C
Maximum output current	8 A
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.035 µs
surface mount	NO
Base Number Matches	1

	BYW29-200M-ISO	BYW29-100M-ISO	BYW29-100SM	BYW29-200SM	BYW29-150M	BYW29-150SM	BYW29-200M
Description	RECTIFIER DIODE,200V V(RRM),TO-220AB	RECTIFIER DIODE,100V V(RRM),TO-220AB	RECTIFIER DIODE,100V V(RRM),CHIP / DIE	RECTIFIER DIODE,200V V(RRM),CHIP / DIE	8A, 150V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, METAL, TO-220M, 3 PIN	RECTIFIER DIODE,150V V(RRM),CHIP / DIE	8A, 200V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum non-repetitive peak forward current	80 A	80 A	80 A	80 A	80 A	80 A	80 A
Number of components	1	1	1	1	1	1	1
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Maximum output current	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Maximum repetitive peak reverse voltage	200 V	100 V	100 V	200 V	150 V	150 V	200 V
Maximum reverse recovery time	0.035 µs	0.035 µs	0.035 µs	0.035 µs	0.05 µs	0.035 µs	0.05 µs
surface mount	NO	NO	YES	YES	NO	YES	NO
Maximum forward voltage (VF)	1.5 V	1.5 V	1.5 V	1.5 V	-	1.5 V	-
Base Number Matches	1	1	1	1	1	-	-

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