VISHAY
BYX82 to BYX86
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
\
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
Low reverse current
High surge current loading
Applications
Rectification, general purpose
Mechanical Data
Case:
Sintered glass case, SOD 57
949539
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
370 mg, (max. 500 mg)
Parts Table
Part
BYX82
BYX83
BYX84
BYX85
BYX86
Type differentiation
V
R
= 200 V; I
FAV
= 2 A
V
R
= 400 V; I
FAV
= 2 A
V
R
= 600 V; I
FAV
= 2 A
V
R
= 800 V; I
FAV
= 2 A
V
R
= 1000 V; I
FAV
= 2 A
SOD57
SOD57
SOD57
SOD57
SOD57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Peak forward surge current
Repetitive peak forward current
Average forward current
i
2
*t-rating
Junction and storage temperature range
T
amb
≤
45 °C
t
p
= 10 ms, half sinewave
Sub type
BYX82
BYX83
BYX84
BYX85
BYX86
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
I
FSM
I
FRM
I
FAV
i
2
*t
Value
200
400
600
800
1000
50
10
2
8
Unit
V
V
V
V
V
A
A
A
A
2
*s
°C
T
j
= T
stg
- 55 to +
175
Document Number 86052
Rev. 4, 07-Jan-03
www.vishay.com
1
BYX82 to BYX86
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25 mm
Sub type
Symbol
R
thJA
R
thJA
Value
45
100
VISHAY
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Reverse recovery charge
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= I
R
= 1 A, di/dt = 5 A/µs
Test condition
Sub type
Symbol
V
F
I
R
I
R
C
D
t
rr
Q
rr
Min
Typ.
0.9
0.1
10
20
2
3
4
6
Max
1.0
1
25
Unit
V
µA
µA
pF
µs
µC
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
l
100
80
60
40
20
T
L
=constant
l
I
F
– Forward Current ( A )
10
1
T
j
=175°C
T
j
=25°C
0.1
Scattering Limits
0
0
5
10
15
20
25
30
94 9573
0.01
0
0.6
1.2
1.8
2.4
3.0
l – Lead Length ( mm )
V
F
– Forward Voltage ( V )
94 9572
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Forward Current vs. Forward Voltage
240
T
j
– Junction Temperature (
°
C )
30
R
thJAv
100K/W
V
RRM
V
R
BYX
82
BYX
83
BYX
84
BYX
85
BYX
86
0
400
800
1200
1600
94 9574
200
160
120
80
40
0
C
D
– Diode Capacitance ( pF )
R
thJAv
57K/W
R
thJAv
35K/W
24
18
12
6
0
0.1
1
f=1MHz
T
j
=25°C
10
100
94 9579
Reverse / Repetitive Peak Reverse Voltage ( V )
V
R
– Reverse Voltage ( V )
Figure 2. Junction Temperature vs. Reverse/Repetitive Peak
Reverse Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2
Document Number 86052
Rev. 4, 07-Jan-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
BYX82 to BYX86
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86052
Rev. 4, 07-Jan-03
www.vishay.com
5
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