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BFQ81-GS08

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size483KB,9 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
Download Datasheet Parametric Compare View All

BFQ81-GS08 Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN,

BFQ81-GS08 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)5800 MHz
Base Number Matches1

BFQ81-GS08 Related Products

BFQ81-GS08 BFQ81-GS18
Description RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN,
Reach Compliance Code unknown unknown
Other features LOW NOISE LOW NOISE
Maximum collector current (IC) 0.03 A 0.03 A
Collector-emitter maximum voltage 16 V 16 V
Configuration SINGLE SINGLE
highest frequency band L BAND L BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 5800 MHz 5800 MHz
Base Number Matches 1 1
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