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BFR96TS

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size92KB,9 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BFR96TS Overview

Transistor,

BFR96TS Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.7 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
BFR96TS
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
3
2
94 9308
13623
1
BFR96TS Marking: BFR96TS
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
15
2.5
100
700
150
–65 to +150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
45
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
150
Unit
K/W
Document Number 85037
Rev. 5, 22-Jan-01
www.vishay.com
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