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F1827CCD1600

Description
25 A, 1600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size668KB,4 Pages
ManufacturerCrydom
Websitehttp://www.crydom.com/en/index.shtml
Environmental Compliance
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F1827CCD1600 Overview

25 A, 1600 V, SILICON, RECTIFIER DIODE

F1827CCD1600 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCrydom
Parts packaging codeMODULE
package instructionR-XUFM-X3
Contacts3
Reach Compliance Codecompli
Other featuresUL RECOGNIZED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.55 V
JESD-30 codeR-XUFM-X3
JESD-609 codee3/e4
Maximum non-repetitive peak forward current400 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature125 °C
Maximum output current25 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1600 V
surface mountNO
Terminal surfaceTIN/SILVER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
F18 Series
Industry Standard Package and Circuits
Power Control Building Blocks
• Nine Circuits to Chose from
AVAILABLE OPTIONS
ELECTRICAL SPECIFICATIONS
Description
Maximum DC Output Current (Tc = 85°C)
Maximum Voltage Drop @ Amps Peak
Operating Junction Temperature Range
Critical Rate of Rise of On-State Current @ TJ=125°C [A/µs]
Critical Rate of Rise of Off-State Voltage [V/µs]
Symbol
I
D
V
F
T
J
di/dt
dv/dt
27
25 A
1.55V @ 75 A
-40 - 125°C
100
1000
42
40 A
1.4V @ 120 A
-40 - 125°C
100
1000
57
55 A
1.4V @ 165 A
-40 - 125°C
100
1000
400 (120 VAC)
600 (240 VAC)
800 (280 VAC)
1200 (480 VAC)
1400 (530 VAC)
1600 (600 VAC)
1500
9350
150
3.0
0.5
5.0
0.25
2500
92
90 A
1.4V @ 270 A
-40 - 125°C
100
1000
107 (2)
105 A
1.65V @ 300 A
-40 - 125°C
100
1000
Repetitive Peak Reverse Voltage (AC Line Nominal) [Vpk]
V
RRM
Maximum Non-Repetitive Surge Current (1/2 Cycle, 60 Hz) [A]
Maximum I²T for Fusing (t=8.3ms) [A²sec]
Minimum Required Gate Current to Trigger @ 25°C [mA]
Minimum Required Gate Voltage to Trigger @ 25°C [V]
Average Gate Power [W]
Maximum Peak Reverse Gate Voltage [V]
Maximum Thermal Resistance, Junction to Ceramic Base per
Chip [°C/W]
Isolation Voltage [Vrms]
I
TSM
IT
I
GT
V
GT
P
G(AV)
V
GM
R
JC
V
ISOL
2
400
670
150
3.0
0.5
5.0
0.4
2500
1000
4150
150
3.0
0.5
5.0
0.28
2500
1950
15800
150
3.0
0.5
5.0
0.14
2500
2250
25000
150
3.0
0.5
5.0
0.135
2500

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