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BZW03D8V2

Description
Trans Voltage Suppressor Diode, 1000W, Unidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size68KB,5 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
Download Datasheet Parametric View All

BZW03D8V2 Overview

Trans Voltage Suppressor Diode, 1000W, Unidirectional, 1 Element, Silicon,

BZW03D8V2 Parametric

Parameter NameAttribute value
MakerTEMIC
Reach Compliance Codeunknown
Breakdown voltage nominal value12.6 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak reverse power dissipation1000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.85 W
Certification statusNot Qualified
Maximum reverse current2400 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BZW03D...
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Clamping sealed package
Applications
Voltage regulators and transient suppression circuits
94 9588
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Test Conditions
l=10mm,
T
L
=25
°
C
T
amb
=45
°
C
Type
Symbol
P
V
P
V
P
ZRM
t
p
=100
m
s,
T
j
=25
°
C
P
ZSM
T
j
T
stg
Value
6.0
1.85
20
1000
175
–65...+175
Unit
W
W
W
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Junction ambient
Test Conditions
l=25mm, T
L
=constant
on PC board with spacing 37.5mm
Symbol
R
thJA
R
thJA
Value
30
70
Unit
K/W
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=1A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
1 (5)
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