BAT85S
Vishay Telefunken
Small Signal Schottky Barrier Diode
Features
D
Integrated protection ring against static
discharge
D
Very low forward voltage
Applications
Applications where a very low forward voltage
is required
94 9367
Order Instruction
Type
BAT85S
Type Differentiation
V
R
= 30 V
Ordering Code
BAT85S–TAP
BAT85S–TR
Remarks
Ammopack
Tape and Reel
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
t
p
≤
10 ms
t
p
≤1s
PCB mounting, l=4 mm;
V
RWM
=25 V, T
amb
=50
°
C
Type
Symbol
V
R
I
FSM
I
FRM
I
F
I
FAV
T
j
T
stg
Value
30
5
300
200
200
125
–65...+150
Unit
V
A
mA
mA
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4 mm, T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
Document Number 85513
Rev. 4, 12-Feb-01
www.vishay.com
1 (4)
BAT85S
Vishay Telefunken
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25 V
V
R
=1 V, f=1MHz
Type
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
C
D
Min
Typ
Max
240
320
400
500
800
2
10
Unit
mV
mV
mV
mV
mV
m
A
pF
Forward voltage
g
Reverse current
Diode capacitance
Characteristics
(T
j
= 25
_
C unless otherwise specified)
200
P
R
– Reverse Power Dissipation ( mW )
180
160
140
120
100
80
60
40
20
0
25
15822
1000
V
R
= 30 V
I
F
– Forward Current ( A )
100
T
j
= 150°C
R
thJA
=
540K/W
P
R
–Limit
@100%V
R
T
j
= 25°C
10
P
R
–Limit
@80%V
R
1
0.1
50
75
100
125
150
15824
0
0.5
1.0
1.5
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
V
R
= V
RRM
Figure 3. Forward Current vs. Forward Voltage
10
9
C
D
– Diode Capacitance ( pF )
8
7
6
5
4
3
2
1
0
0.1
15825
f=1MHz
I
R
– Reverse Current (
m
A )
100
10
1
25
15823
50
75
100
125
150
1.0
10.0
100.0
T
j
– Junction Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2 (4)
Document Number 85513
Rev. 4, 12-Feb-01
BAT85S
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
4 (4)
Document Number 85513
Rev. 4, 12-Feb-01
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