BF995
N-Channel-Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
D
High AGC-range
D
Low feedback capacitance
2
1
G
2
G
1
D
94 9279
13 579
3
4
12623
BF995 Marking: MB
Plastic case (SOT 143)
1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1
S
Absolute Maximum Ratings
Parameters
Drain source voltage
Drain current
Gate 1/gate 2-source peak current
Total power dissipation
Channel temperature
Storage temperature range
T
amb
Symbol
V
DS
I
D
Value
20
30
10
200
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
v
60°C
±I
G1/2SM
P
tot
T
Ch
T
stg
Maximum Thermal Resistance
Parameters
Channel ambient on glass fibre printed board
(40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
1 (7)
BF995
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameters / Test Conditions
Drain-source breakdown voltage
I
D
= 10
m
A, –V
G1S
= –V
G2S
= 4 V
Gate 1-source breakdown voltage
±I
G1S
= 10 mA, V
G2S
= V
DS
= 0
Gate 2-source breakdown voltage
±I
G2S
= 10 mA, V
G1S
= V
DS
= 0
Gate 1-source leakage current
±V
G1S
= 5 V, V
G2S
= V
DS
= 0
Gate 2-source leakage current
±V
G2S
= 5 V, V
G1S
= V
DS
= 0
Drain current
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V
Gate 1-source cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20
m
A
Gate 2-source cut-off voltage
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
m
A
Type
Symbol
V
(BR)DS
±V
(BR)G1SS
±V
(BR)G2SS
±I
G1SS
±I
G2SS
I
DSS
I
DSS
I
DSS
–V
G1S(OFF)
–V
G2S(OFF)
Min.
20
8
8
14
14
100
100
18
10.5
18
3.5
3.5
Typ.
Max.
Unit
V
V
V
nA
nA
mA
mA
mA
V
V
BF 995
BF 995 A
BF 995 B
4
4
9.5
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz, T
amb
= 25°C, unless otherwise specified
Parameters / Test Conditions
Forward transadmittance
Gate 1-input capacitance
Gate 2-input capacitance
V
G1S
= 0, V
G2S
= 4 V
Feedback capacitance
Output capacitance
Power gain
g
S
= 2 mS, g
L
= 0.5 mS,f = 200 MHz
AGC range
V
G2S
= 4 to –2 V, f = 200 MHz
Noise figure
g
S
= 2 mS, g
L
= 0.5 mS, f= 200 MHz
Type
Symbol
y
21s
C
issg1
C
issg2
C
rss
C
oss
G
ps
Min.
12
Typ.
15
3.7
1.6
25
1.6
20
50
1.8
2.5
Max.
Unit
mS
pF
pF
fF
pF
dB
dB
dB
n
G
ps
F
2 (7)
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
BF995
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
P
tot
– Total Power Dissipation ( mW )
y
21s
– Forward Transadmittance ( mS )
250
200
150
100
50
0
0
96 12159
21
18
15
12
9
6
3
0
–2
0
–1
0
1
2
4V
3V
2V
1V
3
4
V
DS
=15V
f=1MHz
V
G2S
=5V
30
60
90
120
150
96 12162
T
amb
– Ambient Temperature (
°C
)
V
G1S
– Gate 1 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
20
Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage
4.0
C
issg1
– Gate 1 Input Capacitance ( pF )
V
G1S
= 0.6V
I
D
– Drain Current ( mA )
16
12
8
4
0
0
96 12160
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–2
–1
0
1
2
3
V
G1S
– Gate 1 Source Voltage ( V )
V
DS
=15V
V
G2S
=4V
f=1MHz
0.4V
0.2V
0
–0.2V
–0.4V
–0.6V
–0.8V
4
8
12
16
20
24
V
DS
– Drain Source Voltage ( V )
96 12163
Figure 2. Drain Current vs. Drain Source Voltage
24
20
16
12
8
4
0
–2
96 12161
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
4.0
y
21s
– Forward Transadmittance ( mS )
V
DS
=15V
I
DS
=10mA
C
issg2
– Gate 2 Input Capacitance ( pF )
V
G1S
=0.5V
0
3.2
2.4
1.6
0.8
0
–2
0
2
V
DS
=15V
V
G1S
=0
f=1MHz
–0.5V
–1
0
1
2
3
4
5
6
96 12164
4
6
V
G2S
– Gate 2 Source Voltage ( V )
V
G2S
– Gate 2 Source Voltage ( V )
Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
3 (7)
BF995
3.0
C
oss
– Output Capacitance ( pF )
2.5
2.0
1.5
1.0
0.5
0
0
96 12165
10
V
G2S
=4V
f=1MHz
5
0
Im ( y ) ( mS )
21
–5
–10
–15
–20
–25
700MHz
–30
2
4
6
8
10 12 14 16 18 20
96 12167
V
DS
=15V
V
G2S
=4V
f=50...700MHz
I
D
=5mA
10mA
20mA
f=50MHz
100MHz
200MHz
300MHz
400MHz
500MHz
600MHz
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Re (y
21
) ( mS )
V
DS
– Drain Source Voltage ( V )
Figure 7. Output Capacitance vs. Drain Source Voltage
18
16
14
Im ( y ) ( mS )
11
12
10
8
6
4
2
0
0
96 12166
Figure 9. Short Circuit Forward Transfer Admittance
7
f=700MHz
600MHz
500MHz
f=700MHz
600MHz
6
5
I
D
=5mA
500MHz
400MHz
300MHz
200MHz
100MHz
1
2
3
4
5
V
DS
=15V
V
G2S
=4V
I
D
=5...20mA
f=50...700MHz
6
7
8
9
10
Im ( y ) ( mS )
22
4
400MHz
3
300MHz
2
200MHz
1
0
0
0.2
0.4
0.6
0.8
100MHz
I
D
=20mA
V
DS
=15V
V
G2S
=4V
I
D
=5...20mA
f=50...700MHz
1.0
1.2
1.4
Re (y
11
) ( mS )
96 12168
Re (y
22
) ( mS )
Figure 8. Short Circuit Input Admittance
Figure 10. Short Circuit Output Admittance
4 (7)
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
BF995
V
DS
= 15 V; I
D
= 5 to 20 mA;V
G2S
= 4 V; Z
0
= 50
W
S
11
j
120°
j0.5
j2
150°
j0.2
j5
300
30°
S
12
90°
60°
0
0.2
0.5
1
2
5
100
50
1
600
180°
700MHz
0.04
0.08
0°
–j0.2
12 920
S
21
90°
120°
60°
180°
0.8
1.6
0°
0
–150°
I
D
= 20mA
10mA
–30°
5mA
–30°
–j0.2
–120°
12 922
–60°
–90°
12 923
Figure 12. Forward transmission coefficient
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
Á Á
ÁÁÁÁÁÁÁÁÁÁ
Á Á
700 MHz
500
300
–j0.5
–j
–j2
–j5
–150°
–30°
–120°
12 921
–60°
–90°
Figure 11. Input reflection coefficient
Figure 13. Reverse transmission coefficient
S
22
j
j0.5
30°
j0.2
700MHz
0.2
0.5
1
2
5
100
j5
j2
400
200
50
1
300
500
–j5
700 MHz
–j0.5
–j
–j2
Figure 14. Output reflection coefficient
5 (7)
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