DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17A
NPN 3 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September1995
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
DESCRIPTION
NPN transistor in a plastic SOT23 package.
handbook, halfpage
BFS17A
3
APPLICATIONS
•
It is intended for RF applications such as oscillators
in TV tuners.
1
2
MSB003
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
Marking code:
E2p.
Top view
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
f
T
G
UM
F
V
O
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
maximum unilateral power gain
noise figure
output voltage
up to T
s
= 70
°C;
note 1
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°C
I
C
= 14 mA; V
CE
= 10 V; f = 800 MHz
I
C
= 2 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°C
d
im
=
−60
dB; I
C
= 14 mA; V
CE
= 10 V;
R
L
= 75
Ω;
T
amb
= 25
°C;
f
(p+q−r)
= 793.25 MHz
open base
CONDITIONS
open emitter
−
−
−
−
2.8
13.5
2.5
150
TYP.
MAX.
25
15
25
300
−
−
−
−
V
V
mA
mW
GHz
dB
dB
mV
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 70
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−65
−
MIN.
MAX.
25
15
2.5
25
50
300
+150
150
V
V
V
mA
mA
mW
°C
°C
UNIT
Note to the Quick reference data and the Limiting values
1. T
s
is the temperature at the soldering point of the collector pin.
September1995
2
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
F
V
O
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
note 1
noise figure
output voltage
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 2 mA; V
CE
= 1 V; T
amb
= 25
°C
I
C
= 25 mA; V
CE
= 1 V; T
amb
= 25
°C
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°C
I
E
= 0; V
CB
= 10 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 14 mA; V
CE
= 10 V; f = 800 MHz
I
C
= 2 mA; V
CE
= 5 V; Z
S
= 60
Ω;
f = 800 MHz; T
amb
= 25
°C
note 2
MIN.
−
25
25
−
−
−
−
−
−
−
TYP.
−
90
90
2.8
0.7
1.25
0.6
13.5
2.5
150
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 70
°C;
note 1
VALUE
260
BFS17A
UNIT
K/W
MAX.
50
−
−
−
−
−
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
dB
mV
S
21
=
10 log ------------------------------------------------------------- dB.
-
2
2
1
–
S
11
1
–
S
22
2
2. d
im
=
−60
dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
O
; f
p
= 795.25 MHz;
V
q
= V
O
−6
dB; f
q
= 803.25 MHz;
V
r
= V
O
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz.
September1995
3
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
handbook, full pagewidth
1.5 nF
1.5 nF
VBB
10 kΩ
L2
L3
1 nF
1 nF
L1
1 nF
270
Ω
DUT
75
Ω
output
VCC
75
Ω
input
3.3 pF
18
Ω
0.68 pF
MBB251
L1 = L3 = 5
µH
Ferroxcube choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
handbook, halfpage
100
MEA395
handbook, halfpage
1
MEA903
hFE
Cc
(pF)
50
0.5
0
0
10
20
IC (mA)
30
0
0
4
8
12
VCB (V)
16
V
CE
= 1 V; T
amb
= 25
°C.
I
E
= 0; f = 1 MHz; T
amb
= 25
°C.
Fig.3
DC current gain as a function of
collector current.
Fig.4
Collector capacitance as a function of
collector-base voltage.
September1995
4
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
handbook, halfpage
4
MEA904
handbook, halfpage
5
MEA902
fT
(GHz)
3
F
(dB)
4
3
2
2
1
1
0
0
20
IC (mA)
40
0
0
10
IC (mA)
20
V
CE
= 5 V; f = 500 MHz; T
amb
= 25
°C.
V
CE
= 5 V; Z
s
= 60
Ω;
f = 800 MHz; T
amb
= 25
°C.
Fig.5
Transition frequency as a function of
collector current.
Fig.6
Minimum noise figure as a function of
collector current.
September1995
5
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