BF966S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially UHF-tuners.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
3
4
2
94 9307
96 12647
D
High AGC-range
D
Low feedback capacitance
D
Low input capacitance
G
2
G
1
D
1
BF966S Marking: BF966S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
12623
S
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Type
Symbol
Value
V
DS
20
I
D
30
±I
G1/G2SM
10
P
tot
200
T
Ch
150
T
stg
–55 to +150
Unit
V
mA
mA
mW
°
C
°
C
T
amb
≤
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
Document Number 85004
Rev. 3, 20-Jan-99
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1 (8)
BF966S
Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Test Conditions
I
D
= 10
m
A, –V
G1S
= –V
G2S
= 4 V
±I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±I
G2S
= 10 mA, V
G1S
= V
DS
= 0
±V
G1S
= 5 V, V
G2S
= V
DS
= 0
±V
G2S
= 5 V, V
G1S
= V
DS
= 0
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V
BF966S
BF966SA
BF966SB
Type
Symbol
V
(BR)DS
±V
(BR)G1SS
±V
(BR)G2SS
±I
G1SS
±I
G2SS
I
DSS
I
DSS
I
DSS
–V
G1S(OFF)
–V
G2S(OFF)
4
4
9.5
Min
20
8
8
Typ
Max
Unit
V
V
V
nA
nA
mA
mA
mA
V
V
14
14
50
50
18
10.5
18
2.5
2.0
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20
m
A
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
m
A
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power g
gain
AGC range
Noise figure
g
Test Conditions
Symbol
y
21s
C
issg1
C
issg2
C
rss
C
oss
G
ps
G
ps
D
G
ps
F
F
Min
15
Typ
18.5
2.2
1.1
25
0.8
25
18
1.0
1.8
Max
2.6
35
1.2
Unit
mS
pF
pF
fF
pF
dB
dB
dB
dB
dB
V
G1S
= 0, V
G2S
= 4 V
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
V
G2S
= 4 to –2 V, f = 800 MHz
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
40
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Document Number 85004
Rev. 3, 20-Jan-99
BF966S
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
300
P
tot
– Total Power Dissipation ( mW )
250
I
D
– Drain Current ( mA )
200
150
100
50
0
0
96 12159
80
70
60
50
40
30
20
10
0
20
40
60
80
100 120 140 160
12764
V
DS
= 15V
V
G1S
= 4V
3V
2V
1V
0V
–1V
–1
0
1
2
3
4
5
T
amb
– Ambient Temperature (
°C
)
V
G2S
– Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
36
32
I
D
– Drain Current ( mA )
28
24
20
16
12
8
4
0
0
12762
Figure 4. Drain Current vs. Gate 2 Source Voltage
4.0
1.5V
1V
C
issg1
– Gate 1 Input Capacitance ( pF )
V
G1S
= 2V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
V
G2S
= 4V
0.5V
V
DS
=15V
V
G2S
=4V
f=1MHz
0V
–0.5V
–1V
2
4
6
8
10
12
14
16
3
6
9
12 15 18 21 24 27 30
V
DS
– Drain Source Voltage ( V )
12765
I
D
– Drain Current ( mA )
Figure 2. Drain Current vs. Drain Source Voltage
100
Figure 5. Gate 1 Input Capacitance vs. Drain Current
2.00
C
oss
– Output Capacitance ( pF )
90
I
D
– Drain Current ( mA )
80
70
60
50
40
30
20
10
0
–1
12763
V
DS
= 15V
V
G2S
= 6V
5V
4V
3V
2V
1V
0V
–1V
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
0
V
G2S
=4V
I
D
=10mA
f=1MHz
0
1
2
3
4
5
12766
2
4
6
8
10 12 14 16 18 20
V
G1S
– Gate 1 Source Voltage ( V )
V
DS
– Drain Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
Document Number 85004
Rev. 3, 20-Jan-99
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3 (8)
BF966S
Vishay Telefunken
4.0
C
issg2
– Gate 2 Input Capacitance ( pF )
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
–3
12767
20
V
DS
=15V
V
G1S
=0
f=1MHz
Im ( y ) ( mS )
11
18
16
14
12
10
8
6
4
2
0
–2
–1
0
1
2
3
4
5
6
12770
f=1300MHz
I
D
=5mA
I
D
=10mA
1000MHz
700MHz
400MHz
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
I
D
=20mA
100MHz
0
2
4
6
8
10 12 14 16 18 20
V
G2S
– Gate 2 Source Voltage ( V )
Re (y
11
) ( mS )
Figure 7. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
10
– Transducer Gain ( dB )
0
–10
–20
–30
–40
–50
–60
–70
–5
12768
Figure 10. Short Circuit Input Admittance
0.3
f=1300MHz
0.2
I
D
=5mA
Im ( y ) ( mS )
12
0.1
10mA
20mA
1000MHz
0.0
700MHz
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
0.3
0.4
0.5
f= 200MHz
4V
3V
2V
1V
0V
–0.5V
–1V
S
21
2
V
G2S
=–2...–3V
–4
–3
–2
–1
0
1
2
3
12772
–0.1
0
0.1
0.2
Re (y
12
) ( mS )
V
G1S
– Gate 1 Source Voltage ( V )
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
24
22
20
18
16
14
12
10
8
6
4
2
0
0
12769
Figure 11. Short Circuit Reverse Transfer Admittance
5
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
I
D
=5mA
10mA
20mA
Y
21S
– Forward Transadmittance ( mS )
V
DS
=15V
f=1MHz
V
G2S
=4V
0
–5
f=100MHz
3V
Im ( y ) ( mS )
21
–10
–15
–20
–25
–30
400MHz
700MHz
1000MHz
2V
0V
5
10
15
1V
0.5V
20
25
30
–35
–40
–8
12771
1300MHz
–4
0
4
8
12
16
20
24
I
D
– Drain Current ( mA )
Re (y
21
) ( mS )
Figure 9. Forward Transadmittance vs. Drain Current
Figure 12. Short Circuit Forward Transfer Admittance
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Document Number 85004
Rev. 3, 20-Jan-99
BF966S
Vishay Telefunken
8
f=1300MHz
7
6
Im ( y ) ( mS )
22
5
4
3
2
1
0
0
12773
I
D
=10mA
I
D
=5mA
20mA
1000MHz
700MHz
400MHz
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
1.0
1.5
2.0
2.5
100MHz
0.5
Re (y
22
) ( mS )
Figure 13. Short Circuit Output Admittance
Document Number 85004
Rev. 3, 20-Jan-99
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5 (8)
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