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BF966SB

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size98KB,8 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
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BF966SB Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BF966SB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
Terminal surfaceTin/Lead (Sn/Pb)
BF966S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially UHF-tuners.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
3
4
2
94 9307
96 12647
D
High AGC-range
D
Low feedback capacitance
D
Low input capacitance
G
2
G
1
D
1
BF966S Marking: BF966S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
12623
S
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Type
Symbol
Value
V
DS
20
I
D
30
±I
G1/G2SM
10
P
tot
200
T
Ch
150
T
stg
–55 to +150
Unit
V
mA
mA
mW
°
C
°
C
T
amb
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
Document Number 85004
Rev. 3, 20-Jan-99
www.vishay.com
1 (8)

BF966SB Related Products

BF966SB BF966SA BF966S
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified? incompatible incompatible incompatible
Maker Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay)
Reach Compliance Code unknown unknown unknown
Configuration Single Single Single
Maximum drain current (Abs) (ID) 0.03 A 0.03 A 0.02 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.225 W
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE -
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