S-LBC856BWT1G datasheet, PDF - EEWORLD Datasheet

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S-LBC856BWT1G: DescriptionSmall Signal Bipolar Transistor,; CategoryDiscrete semiconductor The transistor; File Size279KB，6 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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S-LBC856BWT1G Overview

Small Signal Bipolar Transistor,

S-LBC856BWT1G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

These transistors are designed for general purpose

amplifier applications. They are housed in the SOT–323/

SC–70 which is designed for low power surface mount

applications.

Features

We declare that the material of product compliance with

RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Symbol

CEO

CBO

EBO

LBC856AWT1G, BWT1G

LBC857AWT1G, BWT1G

CWT1G

LBC858AWT1G, BWT1G

CWT1G

S-LBC856AWT1G, BWT1G

S-LBC857AWT1G, BWT1G

CWT1G

S-LBC858AWT1G, BWT1G

CWT1G

Unit

mAdc

BC856

–65

–80

–5.0

–100

BC857

–45

–50

–5.0

–100

BC858

–30

–5.0

–100

SOT– 323 / SC-70

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR– 5 Board, (1)

= 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

Symbol

θJA

, T

stg

Max

150

833

–55 to +150

Unit

°C/W

°C

BASE

EMITTER

COLLECTOR

DEVICE MARKING

(S-)LBC856AWT1G= 3A; (S-)LBC856BWT1G= 3B;(S-)LBC857AWT1G= 3E; LBC857BWT1G = 3F;

(S-)LBC857CWT1G= 3G; (S-)LBC858AWT1G= 3J; (S-)LBC858BWT1G= 3K; (S-)LBC858CWT1G= 3L

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

= –10 mA)

Collector–Emitter Breakdown Voltage

= –10

µA,

= 0)

Collector–Base Breakdown Voltage

= – 10

µA)

Emitter–Base Breakdown Voltage

= – 1.0

µA)

LBC856 Series

LBC857 Series

LBC858 Series

LBC856 Series

LBC857B Only

LBC858 Series

LBC856 Series

LBC857 Series

LBC858 Series

LBC856 Series

LBC857 Series

LBC858 Series

(BR)CEO

– 65

– 45

– 30

– 80

– 50

– 30

– 80

– 50

– 30

– 5.0

—

– 15

– 4.0

(BR)CES

(BR)CBO

(BR)EBO

µA

Collector Cutoff Current (V

= – 30 V)

= – 30 V, T

= 150°C)

1.FR–5=1.0 x 0.75 x 0.062in

CBO

Rev.O 1/6

S-LBC856BWT1G Related Products

	S-LBC856BWT1G	S-LBC857AWT1G	S-LBC857BWT1G	S-LBC858BWT1G	S-LBC858CWT1G	S-LBC858AWT1G	S-LBC856AWT1G	S-LBC857CWT1G
Description	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,
Maker	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Base Number Matches	1	1	1	1	1	-	-	-

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