LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
CWT1G
LBC858AWT1G, BWT1G
CWT1G
S-LBC856AWT1G, BWT1G
S-LBC857AWT1G, BWT1G
CWT1G
S-LBC858AWT1G, BWT1G
CWT1G
Unit
V
V
V
mAdc
1
2
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
3
I
C
SOT– 323 / SC-70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
θJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
1
BASE
2
EMITTER
3
COLLECTOR
DEVICE MARKING
(S-)LBC856AWT1G= 3A; (S-)LBC856BWT1G= 3B;(S-)LBC857AWT1G= 3E; LBC857BWT1G = 3F;
(S-)LBC857CWT1G= 3G; (S-)LBC858AWT1G= 3J; (S-)LBC858BWT1G= 3K; (S-)LBC858CWT1G= 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= –10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= – 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= – 1.0
µA)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857B Only
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
V
(BR)CEO
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 15
– 4.0
v
V
(BR)CES
v
V
(BR)CBO
v
V
(BR)EBO
v
nA
µA
Collector Cutoff Current (V
CB
= – 30 V)
(V
CB
= – 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
I
CBO
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G
S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= –2.0 mA, V
CE
= –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
LBC857C, LBC858C
h
FE
125
220
420
V
V
V
—
—
—
—
– 0.6
—
180
290
520
—
—
– 0.7
– 0.9
—
—
250
475
800
– 0.3
– 0.65
—
—
– 0.75
– 0.82
—
Collector–Emitter Saturation Voltage (I
C
= –10 mA, I
B
= – 0.5 mA)
Collector–Emitter Saturation Voltage
(I
C
= –100 mA, I
B
= – 5.0 mA)
Base–Emitter Saturation Voltage (I
C
= –10 mA, I
B
= –0.5 mA)
Base–Emitter Saturation Voltage
(I
C
= –100 mA, I
B
= –5.0 mA)
Base–Emitter Voltage (I
C
= –2.0 mA, V
CE
= –5.0 V)
Base–Emitter Voltage
(I
C
= –10 mA, V
CE
= –5.0 V)
CE(sat)
V
V
V
BE(sat)
BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= – 10 mA, V
CE
= – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= – 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= – 0.2 mA,V
CE
= – 5.0 V
dc
, R
S
= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)
f
T
C
ob
NF
100
—
––
—
—
––
—
4.5
10
MHz
pF
dB
ORDERING INFORMATION
( Pb– Free )
Device
LBC856AWT1G series
LBC856AWT3G series
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G
S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G
LBC857/LBC858
2.0
–1.0
h
FE
, NORMALIZED DC CURRENT GAIN
1.5
V, VOLTAGE (VOLTS)
V
CE
= –10 V
T
A
= 25°C
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
1.0
0.7
V
BE(on)
@ V
CE
= –10 V
0.5
0.3
V
CE(sat)
@ I
C
/I
B
= 10
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
0.2
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
θ
VB
, TEMPERATURE COEFFICIENT (mV/ °C)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V
CE
, COLLECTOR– EMITTER VOLTAGE (V)
–2.0
1.0
T
A
= 25°C
–1.6
–55°C to +125°C
1.2
1.6
–1.2
2.0
–0.8
I
C
=
I
C
= –50 mA
I
C
= –20 mA
–10 mA
I
C
= –200 mA
I
C
= –100 mA
2.4
–0.4
2.8
0
–0.02
–0.1
–1.0
–10
–20
–0.2
–1.0
–10
–100
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
10.0
400
C
7.0
ib
300
T
A
=25°C
f
T
, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
C, CAPACITANCE(pF)
200
150
100
80
5.0
3.0
C
ob
T
A
= 25°C
V
CE
= –10V
2.0
60
40
30
20
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20 –30 –40
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G
S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G
LBC856
h
FE
, DC CURRENT GAIN (NORMALIZED)
–1.0
V
CE
= –5.0V
V, VOLTAGE (VOLTS)
T
A
= 25°C
2.0
1.0
0.5
0.2
–0.1–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100–200
I
C
, COLLECTOR CURRENT (mA)
–0.8
–0.6
–0.4
–0.2
0
–0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I
C
, COLLECTOR CURRENT (mA)
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V
BE
@V
CE
= –5.0 V
V
CE(sat)
@ I
C
/I
B
= 10
Figure 7. DC Current Gain
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
–2.0
–1.6
I
C
=
–20mA
–50mA
–100mA –200mA
Figure 8. “On” Voltage
θ
VB
, TEMPERATURE COEFFICIENT (mV/°C)
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–0.2
–1.2
–0.8
–0.4
–10mA
θ
VB
for V
BE
–55°C to 125°C
0
–0.02
T
J
= 25°C
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
40
C, CAPACITANCE (pF)
T
J
= 25°C
C
ib
Figure 10. Base–Emitter Temperature Coefficient
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
500
200
100
50
20
V
CE
= –5.0V
20
10
6.0
4.0
2.0
–0.1 –0.2 –0.5
C
ob
–1.0 –2.0
–5.0
–10 –20
–50 –100
–1.0
–10
–100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G
S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G
RESISTANCE (NORMALIZED)
r( t), TRANSIENT THERMAL
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
D=0.5
0.2
0.05
SINGLE PULSE
0.1
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Z
θJC
(t) = r(t) R
θJC
R
θJC
= 83.3°C/W MAX
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
500
1.0k 2.0k
5.0k
10k
Figure 13. Thermal Response
–200
I
C
, COLLECTOR CURRENT (mA)
–100
–50
T
A
= 25°C
1s
T
J
= 25°C
3 ms
The safe operating area curves indicate I
C
–V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
J(pk)
< 150°C. T
J(pk)
may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
–10
–5.0
–2.0
–1.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–0.5
–10
–30 –45 –65 –100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
Rev.O 5/6
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