EEWORLDEEWORLDEEWORLD

Part Number

Search

LBC848CWT1G-S

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size208KB,5 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

LBC848CWT1G-S Overview

Transistor,

LBC848CWT1G-S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)420
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Nominal transition frequency (fT)100 MHz
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
( Pb– Free )
Device
LBC846AWT1G_S
LBC846AWT3G_S
Package
SC-70
SC-70
Shipping
3000/Tape&Reel
10000/Tape&Reel
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
CWT1G
LBC848AWT1G,BWT1G
CWT1G
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
1
2
SOT–323 /SC–70
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
P
D
R
θJA
P
D
T
J
, T
stg
Max
150
833
2.4
–55 to +150
Unit
mW
°C/W
mW/°C
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
15
5.0
v
V
(BR)CES
v
V
(BR)CBO
v
V
(BR)EBO
I
CBO
v
nA
µA
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
1/5

LBC848CWT1G-S Related Products

LBC848CWT1G-S LBC847CWT1G-S LBC847AWT3G-S LBC848AWT3G-S LBC848AWT1G-S LBC847CWT3G-S LBC846AWT1G-S LBC848CWT3G-S
Description Transistor, Transistor, Transistor, Transistor, Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Maker LRC LRC LRC LRC LRC LRC LRC LRC
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single Single Single Single Single
Minimum DC current gain (hFE) 420 420 110 110 110 420 110 420
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W
surface mount YES YES YES YES YES YES YES YES
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Free, next-generation, ultra-easy-to-use chip design tool
[align=left][color=rgb(51, 51, 51)][font=HelveticaNeue-Light,][b]Hardware designers spend 99% of their time on design and simulation, and only 1% of their time on synthesis, layout and routing, and do...
micbot FPGA/CPLD
About Boot Sector Code
There are several questions about the boot sector code: 1. Which mode should be used for assembly? Is it tiny mode? 2. Should it be made into BIN format when linking? 3. If the source ASM file is asse...
amos Embedded System
Modelsim se simulation method of altera atlpll
I haven’t posted for a long time, come and refresh your memory....
osoon2008 FPGA/CPLD
eeworld should set up a chip coin investment market
eeworld should set up a chip coin investment market, with more than 10 or 20 investment projects. The price will rise or fall according to certain circumstances. That would be fun. For example, if you...
damiaa Suggestions & Announcements
Award: Cruelfox dominates the screen! ——ST Bluetooth development board low power consumption challenge and evaluation activities (including source code)
[align=left]Event details: [url=https://bbs.eeworld.com.cn/thread-604432-1-1.html][u]Click here to view[/u][/url] Review content summary: [url=https://bbs.eeworld.com.cn/thread-609129-1-1.html][u]Clic...
EEWORLD社区 ST - Low Power RF
fatal error C1189: #error : Must define a target architecture.
D:\Program Files\Microsoft Visual Studio 8\VC\PlatformSDK\Include\winnt.h(670) : fatal error C1189: #error : Must define a target architecture. The following is a piece of code in winnt.h: #define Int...
可乐虎 Embedded System

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1496  2830  1186  1179  917  31  57  24  19  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号