BSM 150 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 150 GAL 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
R
THJCDC
V
is
-
-
-
-
P
tot
1250
+ 150
-40 ... + 125
≤
0.1
≤
0.25
≤
0.18
2500
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
I
Cpuls
420
300
W
V
GE
I
C
210
150
Symbol
V
CE
V
CGR
1200
± 20
A
Values
1200
Unit
V
V
CE
I
C
Package
Ordering Code
1200V 210A
HALF BRIDGE GAL 2 C67076-A2013-A70
1
Nov-24-1997
BSM 150 GAL 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 6 mA
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 150 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 150 A,
T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 150 A
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
0.6
-
C
oss
-
1.6
-
C
iss
-
11
-
g
fs
62
-
-
nF
S
I
GES
-
-
400
I
CES
-
-
2
8
2.8
-
nA
V
CE(sat)
-
-
2.5
3.1
3
3.7
mA
V
GE(th)
4.5
5.5
6.5
V
Values
typ.
max.
Unit
2
Nov-24-1997
BSM 150 GAL 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 150 A
R
Gon
= 5.6
Ω
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 150 A
R
Gon
= 5.6
Ω
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 150 A
R
Goff
= 5.6
Ω
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 150 A
R
Goff
= 5.6
Ω
Free-Wheel Diode
Diode forward voltage
I
F
= 150 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 150 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
I
F
= 150 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -1500 A/µs,
T
j
= 125 °C
Reverse recovery charge
I
F
= 150 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -1500 A/µs
T
j
= 25 °C
T
j
= 125 °C
-
-
5
18
-
-
Q
rr
-
0.4
-
µC
t
rr
V
F
-
-
2
1.8
2.5
-
µs
V
-
70
100
t
f
-
600
800
t
d(off)
-
100
200
t
r
-
200
400
t
d(on)
ns
Values
typ.
max.
Unit
3
Nov-24-1997
BSM 150 GAL 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Chopper Diode
Chopper diode forward voltage
I
FC
= 200 A,
V
GE
= 0 V,
T
j
= 25 °C
I
FC
= 200 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time, chopper
I
FC
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -2000 A/µs,
T
j
= 125 °C
Reverse recovery charge, chopper
I
FC
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -2000 A/µs
T
j
= 25 °C
T
j
= 125 °C
-
-
12
36
-
-
Q
rrC
-
0.5
-
µC
t
rrC
V
FC
-
-
2
1.8
2.5
-
µs
V
4
Nov-24-1997
IGBT-Module
IGBT-Modules
%60*$/'1 %60*$5'1
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
PIN 6 and 7
GAL type
only
PIN 4 and 5
GAR type
only
GAL type
GAR type
Update of Drawing Sep-21-98
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