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BUV19

Description
Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size34KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BUV19 Overview

Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN

BUV19 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionTO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)50 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Base Number Matches1
BUV18
BUV19
MECHANICAL DATA
Dimensions in mm
NPN HIGH CURENT
SWITCHING TRANSISTORS
Designed for high energy applications
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
requiring robust fast switching devices
FEATURES
38.61 (1.52)
39.12 (1.54)
1.47 (0.058)
1.60 (0.063)
29.9 (1.177)
30.4 (1.197)
22.23
(0.875)
max.
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
Fast Switching
Low VCE(SAT)
High Switching Currents
High Reliability
Military Options Available
16.64 (0.655)
17.15 (0.675)
APPLICATIONS
TO–3 (TO-204AE)
Pin 1 – Base
Pin 2 – Emitter
Case – Collector
• High Efficiency Converters
• Motor Drive Control
• Switching Regulator
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
Collector-Emitter Voltage (I
E
=0)
V
CEO
V
EBO
I
C
I
C(PK)
I
B
I
B(PK)
P
TOT
T
stg
T
j
R
θJC
Collector-Emitter voltage (I
B
=0)
Emitter- Base Voltage (I
C
=0)
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Total Dissipation @ T
case
= 25°C
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
BUV18
120V
60V
7V
50A
90A
16A
40A
250W
-65 to 200°C
200°C
Max 0.7°C/W
BUV19
160V
80V
7V
50A
70A
12A
30A
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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