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BUV62A.MOD

Description
Power Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size191KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric Compare View All

BUV62A.MOD Overview

Power Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

BUV62A.MOD Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionHERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)40 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FAST SWITCHING NPN
POWER TRANSISTOR
BUV62A
Fast Switching Times
Low Switching Losses
Low Saturation Voltage
Hermetic TO3 Metal package.
Ideally suited for Motor Control, Switching
and Linear Applications
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCEV
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ
Tstg
VBE = -1.5V
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Base Peak Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
400V
300V
7V
40A
60A
8A
12A
250W
1.43W/°C
-55 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
0.70
Units
°C/W
Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing an order.
Semelab Ltd
Telephone +44 (0) 1455 556565
Email:
sales@semelab-tt.com
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Website:
http://www.semelab-tt.com
Document Number 8320
Issue 1
Page 1 of 3

BUV62A.MOD Related Products

BUV62A.MOD BUV62AR1 BUV62A
Description Power Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN Power Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN Power Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it Rohs certified? incompatible conform to incompatible
Maker TT Electronics plc TT Electronics plc TT Electronics plc
package instruction HERMETIC SEALED, METAL, TO-3, 2 PIN HERMETIC SEALED, METAL, TO-3, 2 PIN FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 40 A 40 A 40 A
Collector-emitter maximum voltage 300 V 300 V 300 V
Configuration SINGLE SINGLE SINGLE
JEDEC-95 code TO-204AE TO-204AE TO-204AE
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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