BUV62A datasheet, PDF - EEWORLD Datasheet

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BUV62A: DescriptionPower Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size191KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BUV62A Overview

Power Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

BUV62A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	40 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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FAST SWITCHING NPN

POWER TRANSISTOR

BUV62A

•

Fast Switching Times

Low Switching Losses

Low Saturation Voltage

Hermetic TO3 Metal package.

Ideally suited for Motor Control, Switching

and Linear Applications

High Reliability Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VCEV

VCEO

VEBO

ICM

IBM

Tstg

VBE = -1.5V

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Base Peak Current

TC = 25°C

Total Power Dissipation at

Derate Above 25°C

Junction Temperature Range

Storage Temperature Range

400V

300V

40A

60A

12A

250W

1.43W/°C

-55 to +200°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

θJC

Parameters

Thermal Resistance, Junction To Case

Min.

Typ.

Max.

0.70

Units

°C/W

Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing an order.

Semelab Ltd

Telephone +44 (0) 1455 556565

Email:

sales@semelab-tt.com

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Fax +44 (0) 1455 552612

Website:

http://www.semelab-tt.com

Document Number 8320

Issue 1

Page 1 of 3

BUV62A Related Products

	BUV62A	BUV62AR1	BUV62A.MOD
Description	Power Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN	Power Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN	Power Bipolar Transistor, 40A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it Rohs certified?	incompatible	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	FLANGE MOUNT, O-MBFM-P2	HERMETIC SEALED, METAL, TO-3, 2 PIN	HERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	40 A	40 A	40 A
Collector-emitter maximum voltage	300 V	300 V	300 V
Configuration	SINGLE	SINGLE	SINGLE
JEDEC-95 code	TO-204AE	TO-204AE	TO-204AE
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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