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JANS1N4619D-1

Description
Zener Diode, 3V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-35, DO-7, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size226KB,25 Pages
ManufacturerCompensated Devices Inc.
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JANS1N4619D-1 Overview

Zener Diode, 3V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-35, DO-7, 2 PIN

JANS1N4619D-1 Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
package instructionO-XALF-W2
Reach Compliance Codeunknown
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
GuidelineMIL-19500/435F
Nominal reference voltage3 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance1%
Working test current0.25 mA
Base Number Matches1
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 18 August 2007.
INCH-POUND
MIL-PRF-19500/435H
18 May 2007
SUPERSEDING
MIL-PRF-19500/435G
10 November 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES
1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,
1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are
provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for
each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.
* 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC).
* 1.3 Maximum ratings Unless otherwise specified T
C
= 25°C. Maximum ratings are as shown in maximum test
ratings herein (see 3.8), and as follows:
a.
P
TL
= 500 mW (DO-35) at T
L
= 50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). (Derate I
Z
to 0.0 mA dc at +175°C).
P
TEC
= 500 mW (DO-213AA) at T
EC
= 125°C. (Derate to 0 at 175°C). -65°C
T
J
+175°C; -65°C
T
STG
+175°C.
PTPCB = 400 mW, TA = +55°C. (Derate to 0 at +55°C).
b.
c.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
http://assist.daps.dla.mil.
AMSC N/A
FSC 5961
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