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IS61LV6416-12TI

Description
Standard SRAM, 64KX16, 12ns, CMOS, PDSO44,
Categorystorage    storage   
File Size447KB,8 Pages
ManufacturerIntegrated Circuit Solution Inc.
Download Datasheet Parametric View All

IS61LV6416-12TI Overview

Standard SRAM, 64KX16, 12ns, CMOS, PDSO44,

IS61LV6416-12TI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntegrated Circuit Solution Inc.
package instructionTSOP, TSOP44,.46,32
Reach Compliance Codeunknown
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee0
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of terminals44
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
Maximum standby current0.015 A
Minimum standby current3 V
Maximum slew rate0.19 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Base Number Matches1
IS61LV6416
FEATURES
64K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
— 250 mW (typical) operating
— 250 µW (typical) standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
DESCRIPTION
The
1+51
IS61LV6416 is a high-speed, 1,048,576-bit static
RAM organized as 65,536 words by 16 bits. It is fabricated
using
1+51
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE.
The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV6416 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF-
BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR013-0C
1

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