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L850D-33

Description
Infrared LED,
CategoryLED optoelectronic/LED    photoelectric   
File Size472KB,6 Pages
ManufacturerUshio Opto Semiconductors Inc.
Download Datasheet Parametric View All

L850D-33 Overview

Infrared LED,

L850D-33 Parametric

Parameter NameAttribute value
MakerUshio Opto Semiconductors Inc.
Reach Compliance Codeunknown
Optoelectronic device typesINFRARED LED
Base Number Matches1
High Power Infrared LED (850 nm)
Lead(Pb)Free Product-RoHS Compliant
L850D-33
Features
High Power Infrared LED
Peak wavelength typ. 850 nm
Very High radiant Intensity
Emission angle ±18°
Infrared LED Lamp
L850D-33 is an AlGaAs LED mounted on a lead frame with a clear epoxy lens.
On forward bias it emits a spectral band of radiation, which peaks at 850nm.
Applications
Infrared Illumination for CCTV
IR Data Transmission
Industrial Sensors
Safety Advices
Depending on the application, these devices which emit infrared light may exceed over Accessible
Emission Limit and cause the damage to the human eye.
Keep the safety precautions given in IEC 60825-1 and IEC 625471 before using.
Absolute Maximum Ratings
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
P
D
I
F
I
FP
V
R
T
OPR
T
STG
T
SOL
Maximum Rated Value
180
100
1000
5
-30~ +85
-40 ~ +100
265
Unit
mW
mA
mA
V
°C
°C
°C
Ambient Temperature
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 265°C

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