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MA157A

Description
Silicon epitaxial planar type
CategoryDiscrete semiconductor    diode   
File Size44KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA157A Overview

Silicon epitaxial planar type

MA157A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH SPEED SWITCH
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.003 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Switching Diodes
MA3X157A
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.65
±
0.15
2.8
0.3
1.5
+
0.25
0.05
+
0.2
0.65
±
0.15
0.95
High switching speed
Small terminal capacitance, C
t
Both chips have even characteristics
Can be connected in series
1.9
±
0.2
2.9
0.05
+
0.2
I
Features
1
3
2
0.95
1.45
0 to 0.1
I
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current
(DC)
Repetitive peak
forward current
Non-repetitive peak
forward surge current
*
Junction temperature
Storage temperature
Note) * : t = 1 s
Single
Series
Single
Series
Single
Series
T
j
T
stg
I
FSM
I
FRM
Symbol
V
R
V
RM
I
F
Rating
80
80
100
65
225
145
500
325
150
−55
to
+150
°C
°C
mA
mA
Unit
V
V
mA
0.1 to 0.3
0.4
±
0.2
Marking Symbol: MS
Internal Connection
1
3
2
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
V
R
C
t
t
rr
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 6 V
I
rr
= 0.1 · I
R
, R
L
= 100
80
2
3
Conditions
Min
Typ
Max
0.1
1.2
Unit
µA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1.1
1 : Anode 1
2 : Cathode 2
3 : Anode 2
JEDEC : TO-236
Cathode 1
EIAJ : SC-59
Mini Type Package (3-pin)
0.8
0.16
0.06
+
0.2
0.1
+
0.1
0.4
0.05
+
0.1
1

MA157A Related Products

MA157A MA3X157A
Description Silicon epitaxial planar type Silicon epitaxial planar type
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code SOT-23 SOT-23
package instruction R-PDSO-G3 R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features HIGH SPEED SWITCH HIGH SPEED SWITCH
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V
JEDEC-95 code TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 2 2
Number of terminals 3 3
Maximum output current 0.1 A 0.1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 80 V 80 V
Maximum reverse recovery time 0.003 µs 0.003 µs
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 10 NOT SPECIFIED

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