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EBE82FF4A1RR-6E-E

Description
8GB Fully Buffered DIMM
Categorystorage    storage   
File Size188KB,23 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Environmental Compliance
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EBE82FF4A1RR-6E-E Overview

8GB Fully Buffered DIMM

EBE82FF4A1RR-6E-E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerELPIDA
Parts packaging codeDIMM
package instructionDIMM, DIMM240,40
Contacts240
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.45 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)333 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N240
memory density77309411328 bi
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals240
word count1073741824 words
character code1000000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize1GX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM240,40
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current2.8 A
Maximum slew rate5.16 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelOTHER
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
PRELIMINARY DATA SHEET
8GB Fully Buffered DIMM
EBE82FF4A1RR
Specifications
Density: 8GB
Organization
1024M words
×
72 bits, 4 ranks
Mounting 36 pieces of 2G bits DDR2 SDRAM with
DDP (FBGA)
DDP: 2 pieces of 1Gb chips sealed in one package
Package
240-pin fully buffered, socket type dual in line
memory module (FB-DIMM)
PCB height: 30.35mm
Lead pitch: 1.00mm
Advanced Memory Buffer (AMB): 655-ball FCBGA
Lead-free (RoHS compliant)
Power supply
DDR2 SDRAM: VDD
=
1.8V
±
0.1V
AMB: VCC
=
1.5V
+0.075V/ −0.045V
Data rate: 800Mbps/667Mbps (max.)
Eight internal banks for concurrent operation
(components)
Interface: SSTL_18
Burst lengths (BL): 4, 8
/CAS Latency (CL): 3, 4, 5
Precharge: auto precharge option for each burst
access
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8µs at 0°C
TC
≤ +85°C
3.9µs at
+85°C <
TC
≤ +95°C
Operating case temperature range
TC = 0°C to +95°C
Features
JEDEC standard Raw Card AA Design
Industry Standard Advanced Memory Buffer (AMB)
High-speed differential point-to-point link interface at
1.5V (JEDEC spec)
14 north-bound (NB) high speed serial lanes
10 south-bound (SB) high speed serial lanes
Various features/modes:
MemBIST and IBIST test functions
Transparent mode and direct access mode for
DRAM testing
Interface for a thermal sensor and status indicator
Channel error detection and reporting
Automatic DDR2 SDRAM bus and channel
calibration
SPD (serial presence detect) with 1piece of 256 byte
serial EEPROM
Note: Warranty void if removed DIMM heat
spreader.
Performance
FB-DIMM
System clock
frequency
200MHz
167MHz
Speed grade
PC2-6400F
PC2-5300F
Peak channel
throughput
9.6GByte/s
8.0GByte/s
FB-DIMM link data rate
4.8Gbps
4.0Gbps
DDR2 SDRAM
Speed Grade
DDR2-800 (5-5-5)
DDR2-667 (5-5-5)
DDR data rate
800Mbps
667Mbps
Document No. E1339E20 (Ver. 2.0)
Date Published October 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2008

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