BFS17H datasheet, PDF - EEWORLD Datasheet

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BFS17H: DescriptionRF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size43KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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BFS17H Overview

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

BFS17H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.025 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.33 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1300 MHz
Base Number Matches	1

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SOT23 NPN SILICON PLANAR

RF TRANSISTORS

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS —

BFS17L - E1L

BFS17H - E1H

BFS17L

BFS17H

C

E

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

25

15

2.5

50

25

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector Cut-Off

Current

Static Forward Current

Transfer Ratio

BFS17L

BFS17H

SYMBOL

I

CBO

MIN.

TYP.

MAX.

10

UNIT

nA

µ

A

CONDITIONS.

V

CB

=10V, I

E

=0

V

CB

=10V, I

E

=0,

T

amb

= 100°C

h

FE

25

70

20

100

200

125

1.0

1.3

GHz

pF

1.5

2.0

4.5

-45

pF

dB

I

C

=2.0mA, V

CE

=1.0V

I

C

=2.0mA, V

CE

=1.0V

I

C

=25mA, V

CE

=1.0V

I

C

=2.0mA, V

CE

=5.0V

f=500MHz

I

C

=25mA, V

CE

=5.0V

f=500MHz

I

C

=2.0mA, V

CE

=5V, f=1MHz

V

CB

=10V, f=1MHz

V

EB

=0.5V, f=1MHz

I

C

=2.0mA, V

CE

=5.0V

R

S

=50

Ω

, f=500MHz

I

C

=10mA, V

CE

=6.0V

R

L

=37.5

Ω

,T

amb

=25°C

V

o

=100mV at f

p

=183MHz

V

o

=100mV at f

q

=200MHz

measured at f

(2q-p)

=217MHz

Transition

Frequency

f

T

Feedback Capacitance

Output Capacitance

Input Capacitance

Noise Figure

Intermodulation

Distortion

-C

re

C

obo

C

ibo

N

d

im

0.85

Spice parameter data is available upon request for this device

TBA

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Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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