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BDS652

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size164KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BDS652 Overview

Transistor,

BDS652 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)8 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)10 MHz
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

BDS652 Related Products

BDS652 BDS646 BDS644 BDS648 BDS650
Description Transistor, Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000 1000 1000 1000
JESD-609 code e0 e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 8 W 8 W 8 W 8 W 8 W
surface mount YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 10 MHz 10 MHz 10 MHz 10 MHz 10 MHz
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) - - Philips Semiconductors (NXP Semiconductors N.V.)
Base Number Matches 1 - 1 1 -
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